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Schottky Barrier Rectifier JSCJ SBDB2045TCTB with Plastic Encapsulation and High Current Capability

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Schottky Barrier Rectifier JSCJ SBDB2045TCTB with Plastic Encapsulation and High Current Capability

Reverse Leakage Current (Ir) : 100uA@45V

Non-Repetitive Peak Forward Surge Current : 200A

Voltage - DC Reverse (Vr) (Max) : 45V

Voltage - Forward(Vf@If) : 550mV@10A

Current - Rectified : 20A

Description : 200A 45V 550mV@10A 20A TO-263-2L Single Diodes RoHS

Mfr. Part # : SBDB2045TCTB

Model Number : SBDB2045TCTB

Package : TO-263-2L

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Product Overview

This Schottky Barrier Rectifier offers low power loss and high efficiency with excellent current capability and a low forward voltage drop. Its guard ring die construction provides transient protection, making it suitable for various power rectification applications.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Device Code: SBDB2045TCTB
Package: TO-263-2L
Material: Plastic-Encapsulate Diode
Color: Solid dot = Green molding compound device (if applicable)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Peak repetitive reverse voltage	VRRM				45	V
Working peak reverse voltage	VRWM					V
DC blocking voltage	VR				45	V
RMS reverse voltage	VR(RMS)				31.5	V
Average rectified output current	IO				20	A
Non-Repetitive peak forward surge current (8.3ms half sine wave)	IFSM				200	A
Junction temperature	Tj				150
Storage temperature	Tstg		-55		+150
Reverse voltage	V(BR)	IR=1.0mA	45			V
Reverse current	IR	VR=45V			0.55	mA
Forward voltage	VF	IF=10A, Tj=25		0.30	0.40	V
Forward voltage	VF	IF=10A, Tj=125		0.38	0.46	V
Thermal resistance from junction to ambient	RJA			62.5		/W
Thermal resistance from junction to case	RJC	Tc=25		2.0		/W
Total Capacitance	CTOT	f = 1 MHz, Tj = 25		600		pF

2410121743_JSCJ-SBDB2045TCTB_C5295516.pdf

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