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Plastic Encapsulated Schottky Diode JSCJ BAT54AW SOT323 Package Suitable for Electronic Applications

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Plastic Encapsulated Schottky Diode JSCJ BAT54AW SOT323 Package Suitable for Electronic Applications

Non-Repetitive Peak Forward Surge Current : 600mA

Reverse Leakage Current (Ir) : 2uA@25V

Diode Configuration : 1 Pair Common Anode

Voltage - DC Reverse (Vr) (Max) : 30V

Voltage - Forward(Vf@If) : 1V@100mA

Current - Rectified : 200mA

Description : Diode Array 1 Pair Common Anode 30V 200mA Surface Mount SOT-323

Mfr. Part # : BAT54AW

Model Number : BAT54AW

Package : SOT-323

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Product Overview

The JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD BAT54W/AW/CW/SW is a Schottky Barrier Diode in a SOT-323 plastic-encapsulated package. It features extremely fast switching speed and low forward voltage, making it suitable for various electronic applications.

Product Attributes

Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Package Type: SOT-323
Material: Plastic-Encapsulated
Marking: BAT54W, BAT54AW, BAT54CW, BAT54SW
Solid dot = Green molding compound device, if none, the normal device.

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Peak Repetitive Reverse Voltage	VRRM	30	V
Working Peak Reverse Voltage	VRWM	30	V
DC Blocking Voltage	VR	30	V
Forward Continuous Current	IFM	200	mA	Ta=25
Non-repetitive Peak Forward Surge Current	IFSM	600	mA	@t=8.3ms
Repetitive Peak Forward Current	IFRM	300	mA	@ t1s,0.5
Power Dissipation	PD	200	mW	Ta=25
Thermal Resistance from Junction to Ambient	RJA	500	/W
Junction Temperature	Tj	125
Storage Temperature	Tstg	-55~+150
Reverse voltage (Breakdown)	V(BR)	30	V	IR=100A
Reverse current	IR	2	A	VR=25V
Forward voltage	VF	0.24	V	IF1=0.1mA
		0.32	V	IF2=1mA
		0.40	V	IF3=10mA
		0.50	V	IF4=30mA
		1	V	IF5=100mA
Diode capacitance	CD	10	pF	VR=0V,f=1MHz
Reverse recovery time	trr	5	ns	IF=IR=10mA Irr=0.1IR,RL=100

2410121247_JSCJ-BAT54AW_C77317.pdf

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