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Low forward voltage Schottky barrier diode JSCJ SD103CW in SOD123 package for electronic applications

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Low forward voltage Schottky barrier diode JSCJ SD103CW in SOD123 package for electronic applications

Non-Repetitive Peak Forward Surge Current : 1.5A

Reverse Leakage Current (Ir) : 5uA@10V

Diode Configuration : 1 Independent

Voltage - DC Reverse (Vr) (Max) : 20V

Voltage - Forward(Vf@If) : 600mV@200mA

Current - Rectified : 350mA

Description : Diode 1 Independent 20V 350mA Surface Mount SOD-123

Mfr. Part # : SD103CW

Model Number : SD103CW

Package : SOD-123

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Product Overview

The SD103AW-SD103CW series are Schottky barrier diodes from JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD, housed in a SOD-123 package. These diodes feature a low forward voltage drop, guard ring construction for transient protection, negligible reverse recovery time, and low reverse capacitance, making them suitable for various electronic applications.

Product Attributes

Brand: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Package: SOD-123
Diode Type: Schottky Barrier Diode

Technical Specifications

Model	Peak Repetitive Peak Reverse Voltage (VRRM)	RMS Reverse Voltage (VR(RMS))	Forward Continuous Current (IFM)	Power Dissipation (Pd)	Reverse breakdown voltage (V(BR)R) Min	Forward voltage (VF) Typ	Reverse current (IRM) Max	Capacitance between terminals (CT) Typ	Reverse recovery time (trr) Typ	Storage Temperature (TSTG)	Junction temperature (Tj)	Marking
SD103AW	40 V	28 V	350 mA	500 mW	40 V (IR=100A)	0.37 V (IF=20mA)	5.0 A (VR=30V)	50 pF (VR=0V,f=1.0MHz)	10 ns (IF=IR=200mA, Irr=0.1XIR,RL=100)	-55~+150	125	S4
SD103BW	30 V	21 V	350 mA	500 mW	30 V (IR=100A)	0.37 V (IF=20mA)	5.0 A (VR=20V)	50 pF (VR=0V,f=1.0MHz)	10 ns (IF=IR=200mA, Irr=0.1XIR,RL=100)	-55~+150	125	S5
SD103CW	20 V	14 V	350 mA	500 mW	20 V (IR=100A)	0.60 V (IF=200mA)	5.0 A (VR=10V)	50 pF (VR=0V,f=1.0MHz)	10 ns (IF=IR=200mA, Irr=0.1XIR,RL=100)	-55~+150	125	S6

2410121257_JSCJ-SD103CW-_C21572.pdf

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