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Low reverse current Schottky barrier diode JSCJ DS521-30Y1 ideal for in mobile phones MP3 players and MDs

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Low reverse current Schottky barrier diode JSCJ DS521-30Y1 ideal for in mobile phones MP3 players and MDs

Non-Repetitive Peak Forward Surge Current : 500mA

Reverse Leakage Current (Ir) : 10uA@10V

Operating Junction Temperature Range : -40℃~+125℃

Voltage - DC Reverse (Vr) (Max) : 30V

Voltage - Forward(Vf@If) : 600mV@200mA

Current - Rectified : 200mA

Description : Diode 30V 200mA Surface Mount WBFBP-02C-A

Mfr. Part # : DS521-30Y1

Model Number : DS521-30Y1

Package : WBFBP-02C-A

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Product Overview

This Schottky barrier diode is a small surface mounting type offering low reverse current and low forward voltage for high reliability. It is ideal for high-speed switching in detection applications and is suitable for portable equipment such as mobile phones, MP3 players, MDs, CD-ROMs, DVD-ROMs, and notebook PCs.

Product Attributes

Brand: JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
Model: WBFBP-02C-A
Type: Plastic-Encapsulate Diodes
Origin: China (implied by manufacturer location)

Technical Specifications

Symbol	Parameter	Limit	Unit	Test Condition	Min	Typ	Max
VRRM	Repetitive Peak Reverse Voltage	30	V



VRWM	Working Peak Reverse Voltage	30	V



VR(RMS)	RMS Reverse Voltage	21	V



IO	Average Rectified Output Current	200	mA



IFSM	Non-Repetitive Peak Forward Surge Current@ t=8.3ms	0.5	A



Pd	Power Dissipation	100	mW



RJA	Thermal Resistance from Junction to Ambient	1000	/W



TJ	Operating Junction Temperature Range				-40		+125



Tstg	Storage Temperature Range				-55		+150



V(BR)	Reverse breakdown voltage	30	V	IR=100 A
V(BR)	Reverse breakdown voltage	30	V	VR=10V
IR	Reverse current		A	IF=10mA		0.1
IR	Reverse current		A	IF=100mA		0.35
VF	Forward voltage		V	IF=10mA			0.50
				IF=100mA			0.55
				IF=200mA			0.60
CT	Capacitance between terminals		pF	Ta=25, f=1MHz

2410121845_JSCJ-DS521-30Y1_C3031912.pdf

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