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TOSHIBA GT40QR21 STA1 E D discrete IGBT transistor featuring RoHS compatibility and TO 3P N package

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TOSHIBA GT40QR21 STA1 E D discrete IGBT transistor featuring RoHS compatibility and TO 3P N package

Pd - Power Dissipation : 230W

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

Input Capacitance(Cies) : 1.5nF

Pulsed Current- Forward(Ifm) : 80A

Reverse Recovery Time(trr) : 600ns

Switching Energy(Eoff) : 160uJ

Description : 230W 1.2kV TO-3P-3 Single IGBTs RoHS

Mfr. Part # : GT40QR21(STA1,E,D

Model Number : GT40QR21(STA1,E,D

Package : TO-3P-3

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GT40QR21 Discrete IGBTs

The GT40QR21 is a silicon N-Channel IGBT designed for voltage-resonant inverter switching applications. It features a 6.5th generation IGBT with a monolithically integrated freewheeling diode (RC-IGBT), offering high-speed switching capabilities with typical fall time (tf) of 0.20 s and reverse recovery time (trr) of 0.60 s. The device boasts a low saturation voltage of 1.9 V (typ.) and a high junction temperature capability of 175C (max).

Product Attributes

Brand: TOSHIBA
Product Name: GT40QR21
Package Type: TO-3P(N)
Certifications: RoHS Compatible

Technical Specifications

Characteristics	Symbol	Rating	Unit	Test Condition
Absolute Maximum Ratings
Collector-emitter voltage	VCES	1200	V	(Tc = 25)
Gate-emitter voltage	VGES	25	V
Collector current (DC)	IC	40	A	(Tc = 25)
Collector current (DC)	IC	35	A	(Tc = 100)
Collector current (1 ms)	ICP	80	A
Diode forward current (DC)	IF	20	A	(Tc = 25)
Diode forward current (100 s)	IFP	80	A	(Note 1)
Collector power dissipation	PC	230	W
Junction temperature	Tj	175		(max)
Storage temperature	Tstg	-55 to 175
Mounting torque	TOR	0.8	Nm
Thermal Characteristics
Junction-to-case thermal resistance	Rth(j-c)	0.65	/W	Max
Static Characteristics
Gate leakage current	IGES	100	nA	VGE = 25 V, VCE = 0 V
Collector cut-off current	ICES	1	mA	VCE = 1200 V, VGE = 0 V
Gate-emitter cut-off voltage	VGE(OFF)	4.5	V	IC = 40 mA, VCE = 5 V
Collector-emitter saturation voltage	VCE(sat)(1)	1.50	V	IC = 20 A, VGE = 15 V
Collector-emitter saturation voltage	VCE(sat)(2)	1.75	V	IC = 20 A, VGE = 15 V, Tj = 125
Collector-emitter saturation voltage	VCE(sat)(3)	1.89	V	IC = 20 A, VGE = 15 V, Tj = 175
Collector-emitter saturation voltage	VCE(sat)(4)	1.90	V	IC = 40 A, VGE = 15 V
Collector-emitter saturation voltage	VCE(sat)(5)	2.29	V	IC = 40 A, VGE = 15 V, Tj = 125
Collector-emitter saturation voltage	VCE(sat)(6)	2.50	V	IC = 40 A, VGE = 15 V, Tj = 175
Diode forward voltage	VF	2.70	V	IF = 15 A, VGE = 0 V
Dynamic Characteristics
Input capacitance	Cies	1500	pF	VCE = 10 V, VGE = 0 V, f = 1 MHz
Switching time (rise time)	tr	0.12	s	Resistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 39
Switching time (turn-on time)	ton	0.18	s	Resistive load VCC = 600 V, IC = 40 A, VGG = 15 V, RG = 39
Switching time (fall time)	tf	0.20	s	Inductive Load VCC = 280 V, IC = 40 A, L = 30 H,C = 0.33 F, VGG = 20 V, RG = 10
Switching time (turn-off time)	toff	0.40	s	Inductive Load VCC = 280 V, IC = 40 A, L = 30 H,C = 0.33 F, VGG = 20 V, RG = 10
Switching loss (turn-off switching loss)	Eoff(1)	0.16	mJ	Inductive Load VCC = 280 V, IC = 40 A, L = 30 H,C = 0.33 H, VGG = 20 V, RG = 10
Switching loss (turn-off switching loss)	Eoff(2)	0.29	mJ	Tc = 125
Reverse recovery time	trr	0.60	s	IF = 15 A, VGE = 0 V, di/dt = -20 A/s

2410121943_TOSHIBA-GT40QR21-STA1-E-D_C4153791.pdf

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