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High speed switching JIAENSEMI JNG75T120LZS1 IGBT module designed for soft switching and energy systems

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High speed switching JIAENSEMI JNG75T120LZS1 IGBT module designed for soft switching and energy systems

Td(off) : 875ns

Pd - Power Dissipation : 694W

Td(on) : 165ns

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

Reverse Transfer Capacitance (Cres) : 83pF

Input Capacitance(Cies) : 9.101nF

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4.5V@250uA

Operating Temperature : -55℃~+150℃

Pulsed Current- Forward(Ifm) : 225A

Output Capacitance(Coes) : 318pF

Reverse Recovery Time(trr) : 476ns

Switching Energy(Eoff) : 900uJ

Turn-On Energy (Eon) : 1.1mJ

Description : 694W 1.2kV TO264 Single IGBTs RoHS

Mfr. Part # : JNG75T120LZS1

Model Number : JNG75T120LZS1

Package : TO264

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JNG75T120LZS1 IGBT

JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. Key features include 1200V, 75A rating, high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.

Product Attributes

Brand: JIAEN
Product Name: JNG75T120LZS1
Package: TO-264

Technical Specifications

Parameter	Test Conditions	Min.	Typ.	Max.	Units
Absolute Maximum Ratings
VCES Collector-Emitter Voltage				1200	V
VGES Gate-Emitter Voltage				+ 30	V
IC Continuous Collector Current (TC=25 )				150	A
IC Continuous Collector Current (TC=100)				75	A
ICM Pulsed Collector Current (Note 1)				225	A
IF Diode Continuous Forward Current (TC=100 )				75	A
IFM Diode Maximum Forward Current (Note 1)				225	A
tsc Short Circuit Withstand Time				10	us
PD Maximum Power Dissipation (TC=25 )				694	W
PD Maximum Power Dissipation (TC=100)				278	W
TJ Operating Junction Temperature Range		-55		+150
TSTG Storage Temperature Range		-55		+150
Thermal Characteristics
Rth j-c Thermal Resistance, Junction to case for IGBT			0.18		/ W
Rth j-c Thermal Resistance, Junction to case for Diode			0.5		/ W
Rth j-a Thermal Resistance, Junction to Ambient			25		/ W
Electrical Characteristics (TC=25 unless otherwise noted)
BVCES Collector-Emitter Breakdown Voltage	VGE= 0V, IC= 250uA	1200	-	-	V
ICES Collector-Emitter Leakage Current	VCE= 1200V, VGE= 0V	-	-	100	uA
IGES Gate Leakage Current, Forward	VGE= + 30V, VCE= 0V	-	-	+ 100	nA
VGE(th) Gate Threshold Voltage	VGE= VCE, IC= 250uA	4.5	-	6.5	V
VCE(sat) Collector-Emitter Saturation Voltage	VGE=15V, IC= 75A	-	1.65	2.2	V
Qg Total Gate Charge	VCC=960V VGE=15V IC=75A	-	427	-	nC
Qge Gate-Emitter Charge		-	129	-	nC
Qgc Gate-Collector Charge		-	170	-	nC
td(on) Turn-on Delay Time	VCC=600V VGE=15V IC=75A RG=15 Inductive Load TC=25	-	165	-	ns
tr Turn-on Rise Time		-	115	-	ns
td(off) Turn-off Delay Time		-	875	-	ns
tf Turn-off Fall Time		-	163	-	ns
Eon Turn-on Switching Loss		-	1.1	-	mJ
Eoff Turn-off Switching Loss		-	0.9	-	mJ
Ets Total Switching Loss		-	2.0	-	mJ
Cies Input Capacitance	VCE=25V VGE=0V f = 1MHz	-	9101	-	pF
Coes Output Capacitance		-	318	-	pF
Cres Reverse Transfer Capacitance		-	83	-	pF
Electrical Characteristics of Diode (TC=25 unless otherwise noted)
VF Diode Forward Voltage	IF=75A	-	2.1	3.2	V
trr Diode Reverse Recovery Time	VCE = 600V IF= 75A dIF/dt = 700A/us	-	476	-	ns
IRR Diode peak Reverse Recovery Current		-	25.6	-	A
QRR Diode Reverse Recovery Charge		-	5808	-	nC

2509021810_JIAENSEMI-JNG75T120LZS1_C51484276.pdf

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