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IGBT Logic Level Switching Device Littelfuse NGB18N40ACLBT4G with ESD and Over Voltage Protection

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IGBT Logic Level Switching Device Littelfuse NGB18N40ACLBT4G with ESD and Over Voltage Protection

Description : D2PAK Single IGBTs RoHS

Mfr. Part # : NGB18N40ACLBT4G

Model Number : NGB18N40ACLBT4G

Package : D2PAK

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Product Overview

The NGB18N40ACLB is a Logic Level Insulated Gate Bipolar Transistor (IGBT) designed for ignition and high-voltage/high-current switching applications. It features monolithic circuitry with integrated ESD and Over-Voltage clamped protection, making it ideal for coil-on-plug systems, direct fuel injection, and similar demanding scenarios. The DPAK package offers a smaller footprint, and the device includes features like gate-emitter ESD protection, temperature-compensated gate-collector voltage clamp, and emitter ballasting for short-circuit capability.

Product Attributes

Brand: Littelfuse
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: PbFree Devices

Technical Specifications

Rating	Symbol	Value	Unit	Test Conditions	Temperature	Min	Typ	Max
CollectorEmitter Voltage	VCES	430	VDC
CollectorGate Voltage	VCER	430	VDC
GateEmitter Voltage	VGE	18	VDC
Collector CurrentContinuous @ TC = 25C	IC	18	ADC		TC = 25C
Collector CurrentPulsed	IC	50	AAC
ESD (Human Body Model)	ESD	8.0	kV	R = 1500 , C = 100 pF
ESD (Machine Model)	ESD	800	V	R = 0 , C = 200 pF
Total Power Dissipation @ TC = 25C	PD	115	Watts		TC = 25C
Derate above 25C		0.77	W/C		above 25C
Operating and Storage Temperature Range	TJ, Tstg	55 to +175	C
CollectorEmitter Clamp Voltage	BVCES	380-430	VDC	IC = 2.0 mA	TJ = 40C to 150C	380	395	420
CollectorEmitter Clamp Voltage	BVCES	390-430	VDC	IC = 10 mA	TJ = 40C to 150C	390	405	430
Zero Gate Voltage Collector Current	ICES	2.0-40*	A	VCE = 350 V, VGE = 0 V	TJ = 25C		2.0	20
Zero Gate Voltage Collector Current	ICES	10-40*	A	VCE = 350 V, VGE = 0 V	TJ = 150C		10	40*
Zero Gate Voltage Collector Current	ICES	-1.0-10	A	VCE = 350 V, VGE = 0 V	TJ = 40C		-1.0	10
Reverse CollectorEmitter Leakage Current	IECS	0.7-25*	mA	VCE = 24 V	TJ = 25C		0.7	2.0
Reverse CollectorEmitter Leakage Current	IECS	-12-25*	mA	VCE = 24 V	TJ = 150C		-12	25*
Reverse CollectorEmitter Leakage Current	IECS	-0.1-1.0	mA	VCE = 24 V	TJ = 40C		-0.1	1.0
Reverse CollectorEmitter Clamp Voltage	BVCES(R)	27-40	VDC	IC = 75 mA	TJ = 25C	27	33	37
Reverse CollectorEmitter Clamp Voltage	BVCES(R)	30-40	VDC	IC = 75 mA	TJ = 150C	30	36	40
Reverse CollectorEmitter Clamp Voltage	BVCES(R)	25-35	VDC	IC = 75 mA	TJ = 40C	25	32	35
GateEmitter Clamp Voltage	BVGES	11-15	VDC	IG = 5.0 mA	TJ = 40C to 150C	11	13	15
GateEmitter Leakage Current	IGES	384-1000	ADC	VGE = 10 V	TJ = 40C to 150C	384	640	1000
Gate Emitter Resistor	RGE	10-26	k		TJ = 40C to 150C	10	16	26
CollectortoEmitter OnVoltage	VCE(on)	1.0-1.65	VDC	IC = 6.0 A, VGE = 4.0 V	TJ = 25C	1.0	1.4	1.6
CollectortoEmitter OnVoltage	VCE(on)	0.9-1.6	VDC	IC = 6.0 A, VGE = 4.0 V	TJ = 150C	0.9	1.3	1.6
CollectortoEmitter OnVoltage	VCE(on)	1.1-1.7*	VDC	IC = 6.0 A, VGE = 4.0 V	TJ = 40C	1.1	1.45	1.7*
CollectortoEmitter OnVoltage	VCE(on)	1.3-1.9*	VDC	IC = 8.0 A, VGE = 4.0 V	TJ = 25C	1.3	1.6	1.9*
CollectortoEmitter OnVoltage	VCE(on)	1.2-1.8	VDC	IC = 8.0 A, VGE = 4.0 V	TJ = 150C	1.2	1.55	1.8
CollectortoEmitter OnVoltage	VCE(on)	1.4-1.9*	VDC	IC = 8.0 A, VGE = 4.0 V	TJ = 40C	1.4	1.6	1.9*
CollectortoEmitter OnVoltage	VCE(on)	1.4-2.05	VDC	IC = 10 A, VGE = 4.0 V	TJ = 25C	1.4	1.8	2.05
CollectortoEmitter OnVoltage	VCE(on)	1.5-2.0	VDC	IC = 10 A, VGE = 4.0 V	TJ = 150C	1.5	1.8	2.0
CollectortoEmitter OnVoltage	VCE(on)	1.4-2.1*	VDC	IC = 10 A, VGE = 4.0 V	TJ = 40C	1.4	1.8	2.1*
CollectortoEmitter OnVoltage	VCE(on)	1.6-2.2	VDC	IC = 15 A, VGE = 4.0 V	TJ = 25C	1.6	1.9	2.2
CollectortoEmitter OnVoltage	VCE(on)	1.7-2.3	VDC	IC = 15 A, VGE = 4.0 V	TJ = 150C	1.7	2.1	2.3
CollectortoEmitter OnVoltage	VCE(on)	1.6-2.2	VDC	IC = 15 A, VGE = 4.0 V	TJ = 40C	1.6	1.8	2.2
CollectortoEmitter OnVoltage	VCE(on)	1.3-2.0*	VDC	IC = 10 A, VGE = 4.5 V	TJ = 25C	1.3	1.8	2.0*
CollectortoEmitter OnVoltage	VCE(on)	1.3-2.0*	VDC	IC = 10 A, VGE = 4.5 V	TJ = 150C	1.3	1.75	2.0*
CollectortoEmitter OnVoltage	VCE(on)	1.4-2.0*	VDC	IC = 10 A, VGE = 4.5 V	TJ = 40C	1.4	1.8	2.0*
CollectortoEmitter OnVoltage	VCE(on)	_-_1.65	VDC	IC = 6.5 A, VGE = 3.7 V	TJ = 25C			1.65
Forward Transconductance	gfs	8.0-25	Mhos	VCE = 5.0 V, IC = 6.0 A	TJ = 40C to 150C	8.0	14	25
Input Capacitance	CISS	400-1000	pF	VCC = 25 V, VGE = 0 V	TJ = 40C to 150C	400	800	1000
Output Capacitance	COSS	50-100	pF			50	75	100
Transfer Capacitance	CRSS	4.0-10	pF			4.0	7.0	10
TurnOff Delay Time (Resistive)	td(off)	4.0-10	S	VCC = 300 V, IC = 6.5 A RG = 1.0 k, RL = 46	TJ = 25C		4.0	10
Fall Time (Resistive)	tf	9.0-15	S	VCC = 300 V, IC = 6.5 A RG = 1.0 k, RL = 46	TJ = 25C		9.0	15
TurnOn Delay Time	td(on)	0.7-4.0	S	VCC = 10 V, IC = 6.5 A RG = 1.0 k, RL = 1.5	TJ = 25C		0.7	4.0
Rise Time	tr	4.5-7.0	S	VCC = 10 V, IC = 6.5 A RG = 1.0 k, RL = 1.5	TJ = 25C		4.5	7.0
Short Circuit Withstand Time 1	tsc1	750	s	3 Pulses with 10 ms Period	(55 TJ 150C)			750
Short Circuit Withstand Time 2	tsc2	5.0	ms	3 Pulses with 10 ms Period	(55 TJ 150C)			5.0
Thermal Resistance, Junction to Case	RJC	1.3	C/W					1.3
Thermal Resistance, Junction to Ambient D2PAK (Note 1)	RJA	50	C/W	Mounted on an FR4 board				50
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds	TL	275	C					275
Single Pulse CollectortoEmitter Avalanche Energy	EAS	400	mJ	VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH	Starting TJ = 25C			400
Single Pulse CollectortoEmitter Avalanche Energy	EAS	300	mJ	VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH	Starting TJ = 125C			300
Reverse Avalanche Energy	EAS (R)	2000	mJ	VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH	Starting TJ = 25C			2000

2411192346_Littelfuse-NGB18N40ACLBT4G_C5802412.pdf

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