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Highspeed3 technology IGBT Infineon IKQ75N120CH3 designed for operation in industrial power systems

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Highspeed3 technology IGBT Infineon IKQ75N120CH3 designed for operation in industrial power systems

Td(off) : 282ns

Pd - Power Dissipation : 938W

Td(on) : 34ns

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

Input Capacitance(Cies) : 4.856nF@25V

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 5.1V@2.6mA

Gate Charge(Qg) : 370nC@15V

Reverse Recovery Time(trr) : 370ns

Switching Energy(Eoff) : 2.8mJ

Turn-On Energy (Eon) : 6.4mJ

Description : IGBT 1.2kV 150A 938W Through Hole TO-247-3

Mfr. Part # : IKQ75N120CH3

Model Number : IKQ75N120CH3

Package : TO-247-3

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Product Description

The IKQ75N120CH3 is a high-speed switching IGBT from Infineon's third-generation series, featuring Highspeed3 technology for enhanced efficiency in hard switching and resonant topologies. It offers a 10sec short circuit withstand time at 175C, easy paralleling due to a positive temperature coefficient in VCEsat, low EMI, and low Gate Charge (QG). The device is copacked with a soft, fast recovery full current rated anti-parallel Emitter Controlled diode. It is qualified for industrial applications according to JEDEC standards.

Applications

Industrial UPS
Charger
Energy Storage
Three-level Solar String Inverter
Welding

Product Attributes

Brand: Infineon
Technology: Highspeed3
Certifications: RoHS compliant, Pb-free lead plating
Product Validation: Qualified for industrial applications according to JEDEC47/20/22

Technical Specifications

Type	VCE	IC (Tc=25C)	IC (Tc=134C)	VCEsat (Tvj=25C)	Tvjmax	Marking	Package	Rth(j-c) IGBT	Rth(j-c) Diode	Rth(j-a)
IKQ75N120CH3	1200V	150.0A	75.0A	2.00V	175C	K75MCH3	PG-TO247-3-46	0.16 K/W	0.28 K/W	40 K/W

2410121813_Infineon-IKQ75N120CH3_C467848.pdf

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