Home > Single IGBTs >

High speed switching Infineon IKA08N65F5 IGBT with soft antiparallel diode and RoHS compliant design

Product Categories

Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

High speed switching Infineon IKA08N65F5 IGBT with soft antiparallel diode and RoHS compliant design

Pd - Power Dissipation : 31.2W

Td(off) : 116ns

Td(on) : 9ns

Collector-Emitter Breakdown Voltage (Vces) : 650V

Reverse Transfer Capacitance (Cres) : 3pF

Input Capacitance(Cies) : 500pF

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 3.2V@0.08mA

Operating Temperature : -40℃~+175℃

Pulsed Current- Forward(Ifm) : 24A

Output Capacitance(Coes) : 16pF

Reverse Recovery Time(trr) : 41ns

Switching Energy(Eoff) : 20uJ

Turn-On Energy (Eon) : 70uJ

Description : 31.2W 650V TO-220FP-3 Single IGBTs RoHS

Mfr. Part # : IKA08N65F5

Model Number : IKA08N65F5

Package : TO-220FP-3

Contact Now

Product Overview

The IKA08N65F5 is a high-speed 5th generation FAST IGBT from Infineon, featuring TRENCHSTOPTM 5 technology and copacked with a RAPID 1 fast and soft antiparallel diode. This DuoPack offers best-in-class efficiency in hard switching and resonant topologies, a 650V breakdown voltage, and low QG. It is qualified according to JEDEC for target applications and is Pb-free and RoHS compliant. The device is suitable for applications requiring high-speed switching.

Product Attributes

Brand: Infineon
Technology: TRENCHSTOPTM 5
Diode Type: RAPID 1
Certifications: JEDEC qualified, RoHS compliant
Lead Plating: Pb-free

Technical Specifications

Type	VCE	IC	VCEsat, Tvj=25C	Tvjmax	Marking	Package
IKA08N65F5	650V	8A	1.6V	175C	K08EEF5	PG-TO220-3 FP

Maximum Ratings

Parameter	Symbol	Value	Unit	Conditions
Collector-emitter voltage	VCE	650	V	DC
DC collector current, limited by Tvjmax	IC	10.8 / 6.8	A	TC = 25C / 100C
Pulsed collector current, tp limited by Tvjmax	ICpuls	24.0	A
Turn off safe operating area		- 24.0	A	VCE 650V, Tvj 175C
Diode forward current, limited by Tvjmax	IF	12.3 / 7.3	A	TC = 25C / 100C
Diode pulsed current, tp limited by Tvjmax	IFpuls	24.0	A
Gate-emitter voltage	VGE	20	V
Transient Gate-emitter voltage (tp 10s, D < 0.010)		30	V
Power dissipation	Ptot	31.2 / 15.6	W	TC = 25C / 100C
Operating junction temperature	Tvj	-40...+175	C
Storage temperature	Tstg	-55...+150	C
Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s		260	C
Mounting torque, M3 screw		0.6	Nm	Maximum of mounting processes

Thermal Resistance

Parameter	Symbol	Conditions	Max. Value	Unit
IGBT thermal resistance, junction - case	Rth(j-c)		4.80	K/W
Diode thermal resistance, junction - case	Rth(j-c)		5.60	K/W
Thermal resistance junction - ambient	Rth(j-a)		65	K/W

Electrical Characteristics

Parameter	Symbol	Conditions	min.	typ.	max.	Unit
Static Characteristic
Collector-emitter breakdown voltage	V(BR)CES	VGE = 0V, IC = 0.20mA	650	-	-	V
Collector-emitter saturation voltage	VCEsat	VGE = 15.0V, IC = 8.0A, Tvj = 25C	-	-	1.60	V
		VGE = 15.0V, IC = 8.0A, Tvj = 125C	-	-	1.80
		VGE = 15.0V, IC = 8.0A, Tvj = 175C	-	-	2.10
Diode forward voltage	VF	VGE = 0V, IF = 9.0A, Tvj = 25C	-	-	1.45	V
		VGE = 0V, IF = 9.0A, Tvj = 125C	-	-	1.40
		VGE = 0V, IF = 9.0A, Tvj = 175C	-	-	1.40
Gate-emitter threshold voltage	VGE(th)	IC = 0.08mA, VCE = VGE	3.2	4.0	4.8	V
Zero gate voltage collector current	ICES	VCE = 650V, VGE = 0V, Tvj = 25C	-	-	40.0	A
Zero gate voltage collector current	ICES	VCE = 650V, VGE = 0V, Tvj = 175C	-	-	4000.0	A
Gate-emitter leakage current	IGES	VCE = 0V, VGE = 20V	-	-	100	nA
Transconductance	gfs	VCE = 20V, IC = 8.0A	-	17.0	-	S
Dynamic Characteristic
Input capacitance	Cies	VCE = 25V, VGE = 0V, f = 1MHz	-	500	-	pF


Output capacitance	Coes	VCE = 25V, VGE = 0V, f = 1MHz	-	16	-	pF
Reverse transfer capacitance	Cres	VCE = 25V, VGE = 0V, f = 1MHz	-	3	-	pF
Gate charge	QG	VCC = 520V, IC = 8.0A, VGE = 15V	-	22.0	-	nC
Switching Characteristic, Inductive Load
IGBT Characteristic, at Tvj = 25C
Turn-on delay time	td(on)	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	10	-	ns
Rise time	tr	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	5	-	ns
Turn-off delay time	td(off)	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	116	-	ns
Fall time	tf	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	20	-	ns
Turn-on energy	Eon	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	0.07	-	mJ
Turn-off energy	Eoff	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	0.02	-	mJ
Total switching energy	Ets	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	0.09	-	mJ
IGBT Characteristic, at Tvj = 25C
Turn-on delay time	td(on)	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	9	-	ns
Rise time	tr	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	3	-	ns
Turn-off delay time	td(off)	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	129	-	ns
Fall time	tf	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	35	-	ns
Turn-on energy	Eon	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	0.04	-	mJ
Turn-off energy	Eoff	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	0.02	-	mJ
Total switching energy	Ets	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	0.06	-	mJ
Diode Characteristic, at Tvj = 25C
Diode reverse recovery time	trr	VR = 400V, IF = 4.0A, diF/dt = 800A/s	-	41	-	ns
Diode reverse recovery charge	Qrr	VR = 400V, IF = 4.0A, diF/dt = 800A/s	-	0.14	-	C
Diode peak reverse recovery current	Irrm	VR = 400V, IF = 4.0A, diF/dt = 800A/s	-	6.6	-	A
Diode peak rate of fall of reverse recovery current during tb	dirr/dt	VR = 400V, IF = 4.0A, diF/dt = 800A/s	-	-160	-	A/s
Diode reverse recovery time	trr	VR = 400V, IF = 2.0A, diF/dt = 800A/s	-	27	-	ns
Diode reverse recovery charge	Qrr	VR = 400V, IF = 2.0A, diF/dt = 800A/s	-	0.10	-	C
Diode peak reverse recovery current	Irrm	VR = 400V, IF = 2.0A, diF/dt = 800A/s	-	6.2	-	A
Diode peak rate of fall of reverse recovery current during tb	dirr/dt	VR = 400V, IF = 2.0A, diF/dt = 800A/s	-	-300	-	A/s
IGBT Characteristic, at Tvj = 150C
Turn-on delay time	td(on)	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	9	-	ns
Rise time	tr	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	6	-	ns
Turn-off delay time	td(off)	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	145	-	ns
Fall time	tf	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	18	-	ns
Turn-on energy	Eon	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	0.10	-	mJ
Turn-off energy	Eoff	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	0.03	-	mJ
Total switching energy	Ets	VCC = 400V, IC = 4.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	0.13	-	mJ
IGBT Characteristic, at Tvj = 150C
Turn-on delay time	td(on)	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	9	-	ns
Rise time	tr	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	4	-	ns
Turn-off delay time	td(off)	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	165	-	ns
Fall time	tf	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	25	-	ns
Turn-on energy	Eon	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	0.06	-	mJ
Turn-off energy	Eoff	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	0.02	-	mJ
Total switching energy	Ets	VCC = 400V, IC = 2.0A, VGE = 0.0/15.0V, RG(on) = 48.0, RG(off) = 48.0, L = 30nH, C = 30pF	-	0.08	-	mJ
Diode Characteristic, at Tvj = 150C
Diode reverse recovery time	trr	VR = 400V, IF = 4.0A, diF/dt = 800A/s	-	56	-	ns
Diode reverse recovery charge	Qrr	VR = 400V, IF = 4.0A, diF/dt = 800A/s	-	0.27	-	C
Diode peak reverse recovery current	Irrm	VR = 400V, IF = 4.0A, diF/dt = 800A/s	-	7.5	-	A
Diode peak rate of fall of reverse recovery current during tb	dirr/dt	VR = 400V, IF = 4.0A, diF/dt = 800A/s	-	-134	-	A/s
Diode reverse recovery time	trr	VR = 400V, IF = 2.0A, diF/dt = 800A/s	-	42	-	ns
Diode reverse recovery charge	Qrr	VR = 400V, IF = 2.0A, diF/dt = 800A/s	-	0.19	-	C
Diode peak reverse recovery current	Irrm	VR = 400V, IF = 2.0A, diF/dt = 800A/s	-	7.4	-	A
Diode peak rate of fall of reverse recovery current during tb	dirr/dt	VR = 400V, IF = 2.0A, diF/dt = 800A/s	-	-240	-	A/s

Applications

Solar converters
Uninterruptible power supplies
Welding converters
Mid to high range switching frequency converters

2410121815_Infineon-IKA08N65F5_C536135.pdf

Buy cheap High speed switching Infineon IKA08N65F5 IGBT with soft antiparallel diode and RoHS compliant design product

High speed switching Infineon IKA08N65F5 IGBT with soft antiparallel diode and RoHS compliant design Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!