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Plastic Package HXY MOSFET BT134-800E Triac with High Voltage Blocking and Thermal Cycling Performance

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Plastic Package HXY MOSFET BT134-800E Triac with High Voltage Blocking and Thermal Cycling Performance

Holding Current (Ih) : 30mA

Current - Gate Trigger(Igt) : 10mA

Average Gate Power Dissipation (PG(AV)) : 500mW

Current - On State(It(RMS)) : 4A

Peak off - state voltage(Vdrm) : 800V

Current - Surge(Itsm@f) : 20A

Operating Temperature : -40℃~+125℃

Gate Trigger Voltage (Vgt) : 2V

Description : 30mA 10mA 800V TO-252-2L TRIACs RoHS

Mfr. Part # : BT134-800E

Model Number : BT134-800E

Package : TO-252-2L

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BT134-800E Thyristor

Glass passivated triacs in a plastic package, designed for high bidirectional transient and blocking voltage capability and excellent thermal cycling performance. Ideal for motor control, industrial and domestic lighting, heating, and static switching applications.

Product Attributes

Brand: HUAXUANYANG ELECTRONICS CO.,LTD
Origin: Shenzhen
Material: Plastic-Encapsulate

Technical Specifications

Symbol	Parameter	Conditions	Value	Unit
VDRM /VRRM	Repetitive peak off-state voltage	(Ta=25C unless otherwise noted)	800	V
IGM	Peak Gate Current		-	A
VGM	Peak gate voltage		-	V
PGM	Peak gate power		0.5	W
Tj G(AV)	Junction Temperature		-40 ~ 125	C
IT(RMS)	RMS on-state current		-	A
ITSM	Non repetitive surge peak on-state current	t = 2ms T j =25 C	20	A
I t	I t for fusing	t = 16.7ms T j =25 C	16	A
I t	I t for fusing	t = 10 ms	2	As
dl/dt	Critical-rate of rise of commutation current	IG=2IGT tr100ns F=120Hz	50	A/us
dV/dt	Critical-rate of rise of commutation voltage	Tj =125 C	0.6	V/us
Tstg	Storage Temperature		-40 ~ 150	C
IDRM,IRRM	Repetitive Peak Off-State Current / Repetitive Peak Reverse Current	VDRM=VRRM T j =125 C	0.8	mA
VGD	Gate non-trigger voltage	VD= 1/2V DRM	5	V
VTM	On-state voltage	IT=2A,tp=380us	1.65	V
IGT	Gate trigger current	T2(+), G(+) VD=12V RL=100	10	mA
VGT	Gate trigger voltage	T2(+), G(+) VD=12V RL=100	2.5	V
IH	Holding current	VD=12V,IGT=100mA	30	mA
t gt	Turn-on time	ITM =16A ,VDM=V DRM VDM=67%V DRM(MAX) IG =0.1A,dlG/dt=5A/uS	2	us
(dl/dt)c	Critical-rate of rise of commutation current	Tj =125 C	5.4	A/ms

Package Information

Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	2.200	2.400	0.087	0.094
A1	0.000	0.127	0.000	0.005
b	0.660	0.860	0.026	0.034
c	0.460	0.580	0.018	0.023
D	6.500	6.700	0.256	0.264
D1	5.100	5.460	0.201	0.215
D2		0.483 TYP.		0.190 TYP.
E	6.000	6.200	0.236	0.244
e	2.186	2.386	0.086	0.094
L	9.800	10.400	0.386	0.409
L1		2.900 TYP.		0.114 TYP.
L2	1.400	1.700	0.055	0.067
L3		1.600 TYP.		0.063 TYP.
L4	0.600	1.000	0.024	0.039
	1.100	1.300	0.043	0.051
	0	8	0	8
h	0.000	0.300	0.000	0.012
V		5.350 TYP.		0.211 TYP.

2508201703_HXY-MOSFET-BT134-800E_C50313825.pdf

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