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Soft Switching IGBT JIAENSEMI JNG15T65KS1 with Enhanced Energy Efficiency and High Speed Performance

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Soft Switching IGBT JIAENSEMI JNG15T65KS1 with Enhanced Energy Efficiency and High Speed Performance

Pd - Power Dissipation : 100W

Td(off) : 94ns

Td(on) : 16ns

Collector-Emitter Breakdown Voltage (Vces) : 650V

Reverse Transfer Capacitance (Cres) : 7pF

Input Capacitance(Cies) : 629pF

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4.5V@250uA

Operating Temperature : -55℃~+150℃

Pulsed Current- Forward(Ifm) : 45A

Output Capacitance(Coes) : 45pF

Reverse Recovery Time(trr) : 120ns

Switching Energy(Eoff) : 320uJ

Turn-On Energy (Eon) : 310uJ

Description : 100W 650V TO-263 Single IGBTs RoHS

Mfr. Part # : JNG15T65KS1

Model Number : JNG15T65KS1

Package : TO-263

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JNG15T65KS1 IGBT

JIAEN Trench IGBTs offer lower losses and higher energy efficiency, making them suitable for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.

Product Attributes

  • Brand: JIAEN
  • Model: JNG15T65KS1

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Units
Collector-Emitter VoltageVCES650V
Gate-Emitter VoltageVGES+30V
Continuous Collector Current (TC=25)IC30A
Continuous Collector Current (TC=100)IC15A
Pulsed Collector Current (Note 1)ICM45A
Diode Continuous Forward Current (TC=100)IF15A
Diode Maximum Forward Current (Note 1)IFM45A
Short Circuit Withstand Timetsc10us
Maximum Power Dissipation (TC=25)PD100W
Maximum Power Dissipation (TC=100)PD40W
Operating Junction Temperature RangeTJ-55+150
Storage Temperature RangeTSTG-55+150
Thermal Resistance, Junction to case for IGBTRth j-c1.25/ W
Thermal Resistance, Junction to case for DiodeRth j-c2.3/ W
Thermal Resistance, Junction to AmbientRth j-a62.5/ W
Collector-Emitter Breakdown VoltageBVCESVGE= 0V, IC= 250uA650--V
Collector-Emitter Leakage CurrentICESVCE= 650V, VGE= 0V--100uA
Gate Leakage Current, ForwardIGESVGE=20V, VCE= 0V--100nA
Gate Threshold VoltageVGE(th)VGE= VCE, IC= 250uA4.5-6.5V
Collector-Emitter Saturation VoltageVCE(sat)VGE=15V, IC= 15A-1.92.5V
Total Gate ChargeQgVCC=480V VGE=15V IC=15A-40.7-nC
Gate-Emitter ChargeQge-4.19-nC
Gate-Collector ChargeQgc-30.7-nC
Turn-on Delay Timetd(on)VCC=400V VGE=15V IC=15A RG=15 Inductive Load TC=25 -16-ns
Turn-on Rise Timetr-20-ns
Turn-off Delay Timetd(off)-94-ns
Turn-off Fall Timetf-118-ns
Turn-on Switching LossEon-0.31-mJ
Turn-off Switching LossEoff-0.32-mJ
Total Switching LossEts-0.63-mJ
Input CapacitanceCiesVCE=25V VGE=0V f = 1MHz-629-pF
Output CapacitanceCoes-45-pF
Reverse Transfer CapacitanceCres-7-pF
Diode Forward VoltageVFIF=15A-1.553.0V
Diode Reverse Recovery TimetrrVCE = 400V IF= 15A Rg=15-120-ns
Diode peak Reverse Recovery CurrentIRR-17.5-A
Diode Reverse Recovery ChargeQrr-690-nC

2509021810_JIAENSEMI-JNG15T65KS1_C51484242.pdf


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