| IGBT, Inverter - Maximum Rated Values |
| Collector-emitter voltage | 1200 | V | Tvj = 25C |
| Continuous DC collector current | 300 | A | TC = 100C, Tvj max = 175C |
| Continuous DC collector current | 450 | A | TC = 25C, Tvj max = 175C |
| Repetitive peak collector current | 600 | A | tP = 1 ms |
| Total power dissipation | 1600 | W | TC = 25C, Tvj max = 175C |
| Gate-emitter peak voltage | +/-20 | V | |
| IGBT, Inverter - Characteristic Values |
| Collector-emitter saturation voltage | 1.75 - 2.10 | V | IC = 300 A, VGE = 15 V |
| Gate threshold voltage | 5.2 - 6.4 | V | IC = 11.5 mA, VCE = VGE, Tvj = 25C |
| Gate charge | 2.25 | C | VGE = -15 V ... +15 V |
| Internal gate resistor | 2.5 | | Tvj = 25C |
| Input capacitance | 18.5 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Reverse transfer capacitance | 1.05 | nF | f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V |
| Collector-emitter cut-off current | 3.0 | mA | VCE = 1200 V, VGE = 0 V, Tvj = 25C |
| Gate-emitter leakage current | 400 | nA | VCE = 0 V, VGE = 20 V, Tvj = 25C |
| Turn-on delay time | 0.17 - 0.19 | s | IC = 300 A, VCE = 600 V, VGE = 15 V, RGon = 1.3 |
| Rise time | 0.05 | s | IC = 300 A, VCE = 600 V, VGE = 15 V, RGon = 1.3 |
| Turn-off delay time | 0.45 - 0.60 | s | IC = 300 A, VCE = 600 V, VGE = 15 V, RGoff = 1.3 |
| Fall time | 0.07 - 0.12 | s | IC = 300 A, VCE = 600 V, VGE = 15 V, RGoff = 1.3 |
| Turn-on energy loss per pulse | 9.90 - 19.5 | mJ | IC = 300 A, VCE = 600 V, LS = 80 nH, VGE = 15 V, di/dt = 6050 A/s |
| Turn-off energy loss per pulse | 25.0 - 42.0 | mJ | IC = 300 A, VCE = 600 V, LS = 80 nH, VGE = 15 V, du/dt = 3100 V/s |
| Short circuit data | 1200 | A | VGE 15 V, VCC = 800 V, Tvj = 150C, tP 10 s |
| Thermal resistance, junction to case (per IGBT) | 0.094 | K/W | |
| Thermal resistance, case to heatsink (per IGBT) | 0.03 | K/W | Paste = 1 W/(mK) |
| Temperature under switching conditions | -40 - 150 | C | Tvj op |
| Diode, Inverter - Maximum Rated Values |
| Repetitive peak reverse voltage | 1200 | V | Tvj = 25C |
| Continuous DC forward current | 300 | A | |
| Repetitive peak forward current | 600 | A | tP = 1 ms |
| It - value | 15500 - 19000 | As | VR = 0 V, tP = 10 ms |
| Diode, Inverter - Characteristic Values |
| Forward voltage | 1.65 - 2.10 | V | IF = 300 A |
| Peak reverse recovery current | 335 - 410 | A | IF = 300 A, - diF/dt = 6050 A/s |
| Recovered charge | 30.5 - 67.0 | C | IF = 300 A, - diF/dt = 6050 A/s |
| Reverse recovery energy | 19.0 - 34.5 | mJ | IF = 300 A, - diF/dt = 6050 A/s |
| Thermal resistance, junction to case (per diode) | 0.15 | K/W | |
| Thermal resistance, case to heatsink (per diode) | 0.046 | K/W | Paste = 1 W/(mK) |
| Temperature under switching conditions | -40 - 150 | C | Tvj op |
| NTC Thermistor - Characteristic Values |
| Rated resistance | 5.00 | k | TC = 25C |
| Deviation of R100 | -5 - 5 | % | TC = 100C, R100 = 493 |
| Power dissipation | 20.0 | mW | TC = 25C |
| B-value (B25/50) | 3375 | K | |
| B-value (B25/80) | 3411 | K | |
| B-value (B25/100) | 3433 | K | |
| Module - General Data |
| Isolation test voltage | 2.5 | kV | RMS, f = 50 Hz, t = 1 min |
| Material of module baseplate | Cu | | |
| Internal isolation | Al2O3 | | Basic insulation (class 1, IEC 61140) |
| Creepage distance (terminal to heatsink) | 14.5 | mm | |
| Creepage distance (terminal to terminal) | 13.0 | mm | |
| Clearance (terminal to heatsink) | 12.5 | mm | |
| Clearance (terminal to terminal) | 10.0 | mm | |
| Comparative tracking index | > 200 | | |
| Thermal resistance, case to heatsink (per module) | 0.009 | K/W | Paste = 1 W/(mK) |
| Stray inductance module | 20 | nH | LsCE |
| Module lead resistance (terminals - chip) | 1.20 | m | TC = 25C, per switch |
| Storage temperature | -40 - 125 | C | Tstg |
| Mounting torque for module mounting (Screw M5) | 3.00 - 6.00 | Nm | |
| Terminal connection torque (Screw M6) | 3.0 - 6.0 | Nm | |
| Weight | 345 | g | |
