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High Temperature Stability and Low Gate Charge Infineon IKW08T120 IGBT Module for Frequency Converter

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High Temperature Stability and Low Gate Charge Infineon IKW08T120 IGBT Module for Frequency Converter

Pd - Power Dissipation : 70W

Td(off) : 450ns

Td(on) : 40ns

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

Reverse Transfer Capacitance (Cres) : 28pF

IGBT Type : FS (Field Stop)

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 5V@0.3mA

Gate Charge(Qg) : 53nC@15V

Operating Temperature : -40℃~+150℃

Reverse Recovery Time(trr) : 80ns

Switching Energy(Eoff) : 700uJ

Turn-On Energy (Eon) : 670uJ

Input Capacitance(Cies) : 600pF

Pulsed Current- Forward(Ifm) : 24A

Output Capacitance(Coes) : 36pF

Description : 70W 1.2kV FS (Field Stop) TO-247-3 Single IGBTs RoHS

Mfr. Part # : IKW08T120

Model Number : IKW08T120

Package : TO-247-3

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Product Overview

The IKW08T120 is a Low Loss DuoPack featuring an IGBT in TrenchStop and Fieldstop technology with a soft, fast recovery Emitter Controlled HE diode. It offers reduced VCE(sat) and VF compared to BUP305D, a short circuit withstand time of 10s, and is designed for frequency converters and uninterrupted power supply applications. Its TrenchStop and Fieldstop technology ensures tight parameter distribution, high ruggedness, and temperature-stable behavior. The NPT technology allows for easy parallel switching due to a positive temperature coefficient in VCE(sat). It also boasts low EMI, low gate charge, and a very soft, fast recovery anti-parallel Emitter Controlled HE diode. The device is qualified according to JEDEC standards for target applications and is Pb-free and RoHS compliant.

Product Attributes

  • Brand: Infineon
  • Series: TrenchStop Series IFAG IPC TD VLS
  • Technology: TrenchStop, Fieldstop, NPT
  • Certifications: JEDEC, RoHS compliant
  • Lead Plating: Pb-free

Technical Specifications

Type VCE IC VCE(sat),Tj=25C Tj,max Marking Code Package
IKW08T120 1200V 8A 1.7V 150C K08T120 PG-TO-247-3
Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-emitter breakdown voltage V(BR)CES VGE=0V, IC=0.5mA 1200 - - V
Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=8A, Tj=25C - 1.7 - V
Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=8A, Tj=125C - 2.0 - V
Collector-emitter saturation voltage VCE(sat) VGE=15V, IC=8A, Tj=150C - 2.2 - V
Diode forward voltage VF VGE=0V, IF=8A, Tj=25C - 1.7 - V
Diode forward voltage VF VGE=0V, IF=8A, Tj=125C - 1.7 - V
Diode forward voltage VF VGE=0V, IF=8A, Tj=150C - 1.7 - V
Gate-emitter threshold voltage VGE(th) IC=0.3mA,VCE=VGE 5.0 5.8 6.5 V
Zero gate voltage collector current ICEs VCE=1200V, VGE=0V, Tj=25C - 0.2 - mA
Zero gate voltage collector current ICEs VCE=1200V, VGE=0V, Tj=150C - 2.0 - mA
Gate-emitter leakage current IGEs VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V, IC=8A - 5 - S
Input capacitance Ciss VCE=25V, VGE=0V, f=1MHz - 600 - pF
Output capacitance Coss VCE=25V, VGE=0V, f=1MHz - 36 - pF
Reverse transfer capacitance Crss VCE=25V, VGE=0V, f=1MHz - 28 - pF
Gate charge Qg VCC=960V, IC=8A, VGE=15V - 53 - nC
Diode reverse recovery time trr Tj=25C, VR=600V, IF=8A, diF/dt=600A/s - 80 - ns
Diode reverse recovery charge Qrr Tj=25C, VR=600V, IF=8A, diF/dt=600A/s - 1.0 - C
Diode peak reverse recovery current Irr Tj=25C, VR=600V, IF=8A, diF/dt=600A/s - 13 - A
Diode reverse recovery time trr Tj=150C, VR=600V, IF=8A, diF/dt=600A/s - 200 - ns
Diode reverse recovery charge Qrr Tj=150C, VR=600V, IF=8A, diF/dt=600A/s - 2.3 - C
Diode peak reverse recovery current Irr Tj=150C, VR=600V, IF=8A, diF/dt=600A/s - 20 - A
Parameter Symbol Conditions Typ. Unit
Turn-on delay time td(on) Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 40 ns
Rise time tr Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 23 ns
Turn-off delay time td(off) Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 450 ns
Fall time tf Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 70 ns
Turn-on energy Eon Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 0.67 mJ
Turn-off energy Eoff Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 0.7 mJ
Total switching energy Ets Tj=25C, VCC=600V,IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 1.37 mJ
Turn-on delay time td(on) Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 40 ns
Rise time tr Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 26 ns
Turn-off delay time td(off) Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 570 ns
Fall time tf Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 140 ns
Turn-on energy Eon Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 1.08 mJ
Turn-off energy Eoff Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 1.2 mJ
Total switching energy Ets Tj=150C, VCC=600V, IC=8A, VGE=0/15V, RG=81, L=180nH, C=39pF 2.28 mJ

2410121837_Infineon-IKW08T120_C168885.pdf


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