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IGBT JIAENSEMI JNG75T120QCS2 Featuring 225 Amp Pulsed Collector Current and Short Circuit Withstand

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IGBT JIAENSEMI JNG75T120QCS2 Featuring 225 Amp Pulsed Collector Current and Short Circuit Withstand

Td(off) : 762ns

Pd - Power Dissipation : 694W

Td(on) : 188ns

Collector-Emitter Breakdown Voltage (Vces) : 1.2kV

Reverse Transfer Capacitance (Cres) : 17pF

Input Capacitance(Cies) : 9.86nF

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4V@250uA

Operating Temperature : -55℃~+150℃

Pulsed Current- Forward(Ifm) : 225A

Output Capacitance(Coes) : 281pF

Reverse Recovery Time(trr) : 580ns

Switching Energy(Eoff) : 6.8mJ

Turn-On Energy (Eon) : 11.7mJ

Description : 694W 1.2kV TO-247-3LPlus Single IGBTs RoHS

Mfr. Part # : JNG75T120QCS2

Model Number : JNG75T120QCS2

Package : TO-247-3LPlus

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Product Overview

JIAEN Trench IGBTs offer lower losses and higher energy efficiency for applications such as motor control, general inverters, and other soft switching applications. They feature high-speed switching, higher system efficiency, soft current turn-off waveforms, and square RBSOA.

Product Attributes

Brand: JIAEN
Origin: www.jiaensemi.com

Technical Specifications

Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Units
Absolute Maximum Ratings	VCES	Collector-Emitter Voltage			1200	V
	VGES	Gate-Emitter Voltage			+ 30	V
	IC	Continuous Collector Current ( TC=25 )			150	A
	IC	Continuous Collector Current ( TC=100)			75	A
	ICM	Pulsed Collector Current (Note 1)			225	A
	IF	Diode Continuous Forward Current ( TC=100 )			75	A
	IFM	Diode Maximum Forward Current (Note 1)			225	A
	tsc	Short Circuit Withstand Time			10	us
	PD	Maximum Power Dissipation ( TC=25 )			694	W
	PD	Maximum Power Dissipation ( TC=100)			278	W
Thermal Characteristics	Rth j-c	Thermal Resistance, Junction to case for IGBT		0.18		/ W
	Rth j-c	Thermal Resistance, Junction to case for Diode		0.5		/ W
	Rth j-a	Thermal Resistance, Junction to Ambient		40		/ W
	TJ	Operating Junction Temperature Range	-55		+150
TSTG	Storage Temperature Range	-55		+150
Electrical Characteristics (TC=25 unless otherwise noted )	BVCES	Collector-Emitter Breakdown Voltage VGE= 0V, IC= 250uA	1200	-	-	V
	ICES	Collector-Emitter Leakage Current VCE= 1200V, VGE= 0V		-	100	uA
	IGES	Gate Leakage Current, Forward VGE= + 30V, VCE= 0V		-	+ 100	nA
	VGE(th)	Gate Threshold Voltage VGE= VCE, IC= 250uA	4.0	-	7.0	V
	VCE(sat)	Collector-Emitter Saturation Voltage VGE=15V, IC= 75A		1.65	2.3	V
	Qg	Total Gate Charge VCC=960V VGE=15V IC=75A		472		nC
	Qge	Gate-Emitter Charge		118		nC
	Qgc	Gate-Collector Charge		251		nC
	td(on)	Turn-on Delay Time VCC=600V VGE=15V IC=75A RG=15 Inductive Load TC=25		188	-	ns
	tr	Turn-on Rise Time		115	-	ns
	td(off)	Turn-off Delay Time		762	-	ns
	tf	Turn-off Fall Time		137	-	ns
	Eon	Turn-on Switching Loss		11.7	-	mJ
	Eoff	Turn-off Switching Loss		6.8	-	mJ
	Ets	Total Switching Loss		18.5	-	mJ
	Cies	Input Capacitance VCE=25V VGE=0V f = 1MHz		9860	-	pF
	Coes	Output Capacitance		281	-	pF
Cres	Reverse Transfer Capacitance		17	-	pF
Electrical Characteristics of Diode (TC=25 unless otherwise noted )	VF	Diode Forward Voltage IF=75A		1.85	3.0	V
	trr	Diode Reverse Recovery Time VCE = 600V IF= 75A dIF/dt = 700A/us		580		ns
	IRR	Diode peak Reverse Recovery Current		31.3		A
Qr r	Diode Reverse Recovery Charge		1250		nC

2509021810_JIAENSEMI-JNG75T120QCS2_C51484278.pdf

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