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Durable power transistor HXY MOSFET IRGP4063DPBF-HXY for boost converters and portable power stations

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Durable power transistor HXY MOSFET IRGP4063DPBF-HXY for boost converters and portable power stations

Td(off) : 122ns

Pd - Power Dissipation : 300W

Td(on) : 24ns

Collector-Emitter Breakdown Voltage (Vces) : 650V

Reverse Transfer Capacitance (Cres) : 92pF

IGBT Type : FS (Field Stop)

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4.5V@1mA

Gate Charge(Qg) : 179nC@15V

Reverse Recovery Time(trr) : 98ns

Switching Energy(Eoff) : 1.14mJ

Turn-On Energy (Eon) : 1.38mJ

Input Capacitance(Cies) : 3.363nF

Pulsed Current- Forward(Ifm) : 200A

Output Capacitance(Coes) : 206pF

Description : 300W 650V FS (Field Stop) TO-247 Single IGBTs RoHS

Mfr. Part # : IRGP4063DPBF-HXY

Model Number : IRGP4063DPBF-HXY

Package : TO-247

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Product Overview

The IRGP4063DPBF is an Insulated Gate Bipolar Transistor (IGBT) developed using advanced Trench and Field Stop (T-FS) technology. This technology enhances performance by reducing conduction losses, improving switching characteristics, and increasing avalanche energy. It is designed for applications such as UPS, motor drives, boost converters, and portable power stations, offering features like a positive temperature coefficient, fast switching, low VCE(sat), and a reliable, rugged construction. Halogen-free and green device options are available, compliant with RoHS standards.

Product Attributes

Brand: HUAXUANYANG HXY ELECTRONICS CO.,LTD
Model: IRGP4063DPBF
Package Type: TO-247
Certifications: Halogen Free, Green Devices Available, RoHS Compliant
Origin: Shenzhen HuaXuanYang Electronics CO.,LTD

Technical Specifications

Parameter	Value	Unit	Description
VCES	650	V	Collector-Emitter Voltage
IC @TC=25C	100	A	Collector Current
IC @TC=100C	50	A	Collector Current
ICM	200	A	Pulsed Collector Current, tp limited by TJmax
VCE(sat).typ	1.65	V	Collector-Emitter Saturation Voltage (typ.)
VGE(TH)	4.5 - 6.5	V	Gate Threshold Voltage
PD @TC=25C	300	W	Power Dissipation
TJmax, Tstg	-55 to 175		Operating Junction and Storage Temperature Range
RJC (IGBT)	0.50	/W	Junction-to-Case Thermal Resistance (IGBT)
RJA	40	/W	Junction-to-Ambient Thermal Resistance
Cies	3363	pF	Input Capacitance
Coes	206	pF	Output Capacitance
Cres	92	pF	Reverse Transfer Capacitance
Qg	179	nC	Gate Charge
td(on) @TJ=25C	24	ns	Turn-on Delay Time
tr @TJ=25C	86	ns	Rise Time
td(off) @TJ=25C	122	ns	Turn-Off Delay Time
tf @TJ=25C	74	ns	Fall Time
Eon @TJ=25C	1.38	mJ	Turn-On Switching Loss
Eoff @TJ=25C	1.14	mJ	Turn-Off Switching Loss
Ets @TJ=25C	2.52	mJ	Total Switching Loss

2509181737_HXY-MOSFET-IRGP4063DPBF-HXY_C49003310.pdf

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