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insulated gate bipolar transistor Infineon IRGP4066DPBF with low switching losses and ultrafast diode

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insulated gate bipolar transistor Infineon IRGP4066DPBF with low switching losses and ultrafast diode

Td(off) : 200ns

Pd - Power Dissipation : 454W

Td(on) : 150ns

Collector-Emitter Breakdown Voltage (Vces) : 600V

Reverse Transfer Capacitance (Cres) : 130pF

Gate-Emitter Threshold Voltage (Vge(th)@Ic) : 4V@-

Operating Temperature : -55℃~+175℃

Gate Charge(Qg) : 150nC@15V

Reverse Recovery Time(trr) : 155ns

Switching Energy(Eoff) : 2.155mJ

Turn-On Energy (Eon) : 2.465mJ

Input Capacitance(Cies) : 4.44nF

Pulsed Current- Forward(Ifm) : 300A

Output Capacitance(Coes) : 2420pF

Description : 454W 600V TO-247AC Single IGBTs RoHS

Mfr. Part # : IRGP4066DPBF

Model Number : IRGP4066DPBF

Package : TO-247AC

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Product Overview

The IRGP4066DPbF and IRGP4066D-EPbF are n-channel Insulated Gate Bipolar Transistors (IGBTs) featuring ultrafast soft recovery diodes. Designed with low VCE(ON) Trench IGBT Technology, these devices offer low switching losses and high efficiency across a wide range of applications. They are suitable for various switching frequencies and provide robust transient performance for enhanced reliability. The IGBTs also exhibit excellent current sharing capabilities in parallel operation.

Product Attributes

Brand: Infineon (implied by www.irf.com)
Package Type: TO-247AC (IRGP4066DPbF), TO-247AD (IRGP4066D-EPbF)
Lead Free Package: Yes

Technical Specifications

Parameter	IRGP4066DPbF / IRGP4066D-EPbF	Units	Conditions
VCES Collector-to-Emitter Voltage	600	V
IC(Nominal) Continuous Collector Current	75	A	Nominal Current
IC @ TC = 25C Continuous Collector Current	140	A
IC @ TC = 100C Continuous Collector Current	90	A
ICM Pulse Collector Current	225	A	VGE = 15V
ILM Clamped Inductive Load Current	300	A	VGE = 20V
IF @ TC = 25C Diode Continuous Forward Current	140	A
IF @ TC = 100C Diode Continuous Forward Current	90	A
IFM Diode Maximum Forward Current	300	A
VGE Continuous Gate-to-Emitter Voltage	±20	V
VGE Transient Gate-to-Emitter Voltage	±30	V
PD @ TC = 25C Maximum Power Dissipation	454	W
PD @ TC = 100C Maximum Power Dissipation	227	W
TJ Operating Junction Temperature	-55 to +175	°C
TSTG Storage Temperature Range	-55 to +175	°C
Soldering Temperature, for 10 sec.	300	°C	(0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw	10	lbf·in (1.1 N·m)
RJC (IGBT) Thermal Resistance Junction-to-Case	0.33	°C/W	(each IGBT)
RJC (Diode) Thermal Resistance Junction-to-Case	1.0	°C/W	(each Diode)
RCS Thermal Resistance, Case-to-Sink	0.24	°C/W	(flat, greased surface)
RJA Thermal Resistance, Junction-to-Ambient	40	°C/W	(typical socket mount)
V(BR)CES Collector-to-Emitter Breakdown Voltage	600	V	VGE = 0V, IC = 100µA
ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage	0.30	V/°C	VGE = 0V, IC = 2.0mA (25°C-175°C)
VCE(on) Collector-to-Emitter Saturation Voltage	1.70 (typ)	V	IC = 75A, VGE = 15V, TJ = 25°C
VGE(th) Gate Threshold Voltage	4.0 to 6.5	V	VCE = VGE, IC = 2.1mA
ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient	-21	mV/°C	VCE = VGE, IC = 2.1mA (25°C - 175°C)
gfe Forward Transconductance	50	S	VCE = 50V, IC = 75A, PW = 60µs
ICES Collector-to-Emitter Leakage Current	100	µA	VGE = 0V, VCE = 600V, TJ = 175°C
VFM Diode Forward Voltage Drop	2.23 (typ)	V	IF = 75A, TJ = 25°C
IGES Gate-to-Emitter Leakage Current	±200	nA	VGE = ±20V
Qg Total Gate Charge	150 to 225	nC	IC = 75A, VGE = 15V
Qge Gate-to-Emitter Charge	40 to 60	nC	VGE = 15V
Qgc Gate-to-Collector Charge	60 to 90	nC	VCC = 400V
Eon Turn-On Switching Loss	2465 to 3360	µJ	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C
Eoff Turn-Off Switching Loss	2155 to 3040	µJ	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C
Etotal Total Switching Loss	4620 to 6400	µJ	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C
td(on) Turn-On delay time	50 to 70	ns	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C
tr Rise time	70 to 90	ns	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C
td(off) Turn-Off delay time	200 to 225	ns	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C
tf Fall time	60 to 80	ns	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 25°C
Eon Turn-On Switching Loss	3870	µJ	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C
Eoff Turn-Off Switching Loss	2815	µJ	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C
Etotal Total Switching Loss	6685	µJ	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C
td(on) Turn-On delay time	50	ns	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C
tr Rise time	70	ns	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C
td(off) Turn-Off delay time	240	ns	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C
tf Fall time	70	ns	IC = 75A, VCC = 400V, VGE = 15V, RG = 10Ω, L = 200µH, TJ = 175°C
Cies Input Capacitance	4440	pF	VGE = 0V, f = 1.0MHz
Coes Output Capacitance	245	pF	VGE = 0V, f = 1.0MHz
Cres Reverse Transfer Capacitance	130	pF	VGE = 0V, f = 1.0MHz
RBSOA Reverse Bias Safe Operating Area	FULL SQUARE		VCC = 480V, Vp = 600V, Rg = 10Ω, VGE = +20V to 0V
SCSOA Short Circuit Safe Operating Area	5	µs	VCC = 400V, Vp = 600V, Rg = 10Ω, VGE = +15V to 0V
Erec Reverse Recovery Energy of the Diode	470	µJ	TJ = 175°C
trr Diode Reverse Recovery Time	155	ns	VCC = 400V, IF = 75A, VGE = 15V, Rg = 10Ω, L = 60µH
Irr Peak Reverse Recovery Current	27	A	VCC = 400V, IF = 75A, VGE = 15V, Rg = 10Ω, L = 60µH

2410010132_Infineon-IRGP4066DPBF_C500537.pdf

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