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Medium Power NPN Transistor DIODES ZXTN2031FTA with 5A Collector Current and Green Lead Free Package

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Medium Power NPN Transistor DIODES ZXTN2031FTA with 5A Collector Current and Green Lead Free Package

Emitter-Base Voltage(Vebo) : 7V

Current - Collector Cutoff : 20nA

Pd - Power Dissipation : 1.2W

Transition frequency(fT) : 125MHz

type : NPN

Current - Collector(Ic) : 5A

Collector - Emitter Voltage VCEO : 50V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 50V 5A 125MHz 1.2W Surface Mount SOT-23

Mfr. Part # : ZXTN2031FTA

Model Number : ZXTN2031FTA

Package : SOT-23

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Product Overview

The ZXTN2031F is a 50V NPN medium power transistor in a SOT23 package, offering high continuous collector current (IC = 5A) and peak collector current (ICM = 12A). It features low saturation voltage (VCE(SAT) < 40mV @1A) and low equivalent on-resistance (RCE(SAT) = 24m). This device is AEC-Q101 qualified, totally lead-free, and RoHS compliant, making it a green device suitable for various applications including MOSFET and IGBT gate driving, motor drives, relay lamp and solenoid drives, and DC-DC converters.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT23
  • Material: Molded Plastic, Green Molding Compound
  • Certifications: AEC-Q101 Qualified, Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Complementary PNP Type: ZXTP2025F

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Collector-Base Breakdown VoltageBVCBO80VIC = 100A
Collector-Emitter Breakdown VoltageBVCEV80VIC = 1A, -1V < VBE < +0.3V
Collector-Emitter Breakdown VoltageBVCEO50VIC = 10mA
Emitter-Base Breakdown VoltageBVEBO7VIE = 100A
Collector Emitter Cut-Off CurrentICEV<1nAVCE = 60V, VBE = -1V
Collector - Base Cut-Off CurrentICBO<1nAVCB = 60V
Emitter Cut-off CurrentIEBO<1nAVEB = 6V
Static Forward Current Transfer RatiohFE190-560-IC = 10mA to 5A, VCE = 2V
Collector-Emitter Saturation VoltageVCE(sat)<40mVIC = 1A, IB = 100mA (Typ.)
Base-Emitter Saturation VoltageVBE(sat)800-1000mVIC = 2A to 5A, IB = 40mA to 250mA
Base-Emitter Turn-On VoltageVBE(on)830-930mVIC = 5A, VCE = 2V
Transition FrequencyFT125MHzIC = 500mA, VCE = 10V, f=50MHz
Output CapacitanceCobo29pFVCB = 10V, f=1MHz
Delay Timet(d)16nsVCC = 12V, IC = 2.5A, IB1 = 125mA
Rise Timet(r)27nsVCC = 12V, IC = 2.5A, IB1 = 125mA
Storage Timet(stg)468nsVCC = 12V, IC = 2.5A, IB1 = 125mA
Fall Timet(f)44nsVCC = 12V, IC = 2.5A, IB1 = 125mA
Continuous Collector CurrentIC5A@TA = +25C
Peak Collector CurrentICM12A@TA = +25C
Base CurrentIB1.2A@TA = +25C
Power DissipationPD1.0W@TA = +25C (Note 5)
Thermal Resistance, Junction to AmbientRJA125C/W(Note 5)
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C

1809081631_DIODES-ZXTN2031FTA_C92166.pdf


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