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40V PNP medium power transistor DIODES ZXTP25040DFHTA in compact SOT23 package for MOSFET and IGBT gate drive

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40V PNP medium power transistor DIODES ZXTP25040DFHTA in compact SOT23 package for MOSFET and IGBT gate drive

Emitter-Base Voltage(Vebo) : 7V

Current - Collector Cutoff : 1nA

Pd - Power Dissipation : 1.25W

Transition frequency(fT) : 270MHz

type : PNP

Number : 1 PNP

Current - Collector(Ic) : 3A

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor PNP 40V 3A 270MHz 1.25W Surface Mount SOT-23

Mfr. Part # : ZXTP25040DFHTA

Model Number : ZXTP25040DFHTA

Package : SOT-23

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Product Overview

The ZXTP25040DFH is a 40V PNP medium power transistor in a SOT23 package. It offers high power dissipation, high peak current, and low saturation voltage, making it suitable for applications such as MOSFET and IGBT gate driving, DC-DC converters, motor drives, and high-side drivers. This device is complementary to the ZXTN25040DFH and is available in a totally lead-free and fully RoHS compliant package.

Product Attributes

Brand: Diodes Incorporated
Package: SOT23
Material: Molded Plastic, Green Molding Compound
Color: "Green" Device
Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free, Qualified to JEDEC standards

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Features
Breakdown Voltage Collector-Emitter (Forward Blocking)	BVCEO	-40	V
Breakdown Voltage Emitter-Collector (Reverse Blocking)	BVECO	-3	V
Continuous Collector Current	IC	-3	A
Collector-Emitter Saturation Voltage	VCE(sat)	< -85	mV	@ -1A
Collector-Emitter Saturation Resistance	RCE(sat)	55	m	typical
Power Dissipation	PD	1.25	W
Absolute Maximum Ratings
Collector-Base Voltage	VCBO	-45	V	@ TA = +25C
Collector-Emitter Voltage (Forward Blocking)	VCEO	-40	V	@ TA = +25C
Emitter-collector voltage (Reverse Blocking)	VECO	-3	V	@ TA = +25C
Emitter-Base Voltage	VEBO	-7	V	@ TA = +25C
Continuous Collector Current	IC	-3	A	@ TA = +25C
Peak Pulse Current	ICM	-9	A	@ TA = +25C
Thermal Characteristics
Power Dissipation	PD	1.25	W	@ TA = +25C (Note 9)
Thermal Resistance, Junction to Ambient	RJA	69	C/W	(Note 9)
Thermal Resistance, Junction to Lead	RJL	74.95	C/W	(Note 10)
Thermal Resistance, Junction to Case	RJC	45	C/W	(Note 11)
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
ESD Ratings
Electrostatic Discharge - Human Body Model	ESD HBM	4,000	V	JEDEC Class 3A
Electrostatic Discharge - Machine Model	ESD MM	400	V	JEDEC Class C
Electrical Characteristics
Collector-Base Breakdown Voltage	BVCBO	-45	V	IC = -100A
Collector-Emitter Breakdown Voltage	BVCEO	-40	V	IC = -10mA
Emitter-Base Breakdown Voltage	BVEBO	-7	V	IE = -100A
Emitter-Collector Breakdown Voltage	BVECO	-3	V	IE = -100A
Collector-Base Cutoff Current	ICBO	< -1	nA	VCB = -45V
Collector-Base Cutoff Current	ICBO	-0.5	A	VCB = -45V, Tamb = +100C
Emitter-Base Cutoff Current	IEBO	< -1	nA	VEB = -5.6V
Static Forward Current Transfer Ratio	hFE	300	-	IC = -10mA, VCE = -2V
Static Forward Current Transfer Ratio	hFE	200	-	IC = -1A, VCE = -2V
Static Forward Current Transfer Ratio	hFE	30	-	IC = -3A, VCE = -2V
Collector-Emitter Saturation Voltage	VCE(sat)	-170	mV	IC = -1A, IB = -20mA
Collector-Emitter Saturation Voltage	VCE(sat)	-65	mV	IC = -1A, IB = -100mA
Collector-Emitter Saturation Voltage	VCE(sat)	-165	mV	IC = -3A, IB = -300mA
Base-Emitter Saturation Voltage	VBE(sat)	-930	mV	IC = -3A, IB = -300mA
Base-Emitter Voltage	VBE(on)	-830	mV	IC = -3A, VCE = -2V
Output Capacitance	Cobo	17.4	pF	VCB = -10V, f = 1MHz
Transition Frequency	fT	270	MHz	VCE = -10V, IC = -50mA, f = 100MHz
Turn-on Time	t(on)	75.5	ns	VCC = -15V, IC = -750mA, IB1 = -IB2 = -15mA
Turn-off Time	t(off)	320	ns	VCC = -15V, IC = -750mA, IB1 = -IB2 = -15mA

2412251027_DIODES-ZXTP25040DFHTA_C211430.pdf

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