Sign In | Join Free | My components-electronic.com
China Hefei Purple Horn E-Commerce Co., Ltd. logo
Hefei Purple Horn E-Commerce Co., Ltd.
Hefei Purple Horn E-Commerce Co., Ltd.
Verified Supplier

1 Years
Home > Single Bipolar Transistors >

DIODES ZXTN2010Z 60V NPN Transistor SOT89 Package Low Saturation Voltage and High Continuous Current

Product Categories
Hefei Purple Horn E-Commerce Co., Ltd.
Trust Seal
Verified Supplier
Credit Check
Supplier Assessment
Contact Now

DIODES ZXTN2010Z 60V NPN Transistor SOT89 Package Low Saturation Voltage and High Continuous Current

Emitter-Base Voltage(Vebo) : 7V

Current - Collector Cutoff : 50nA

Pd - Power Dissipation : 2.1W

Transition frequency(fT) : 130MHz

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 5A

Collector - Emitter Voltage VCEO : 60V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 60V 5A 130MHz 2.1W Surface Mount SOT-89

Mfr. Part # : ZXTN2010ZTA

Model Number : ZXTN2010ZTA

Package : SOT-89

Contact Now

Diodes Incorporated ZXTN2010Z 60V NPN Low Saturation Transistor

The Diodes Incorporated ZXTN2010Z is a 60V NPN low saturation transistor in a SOT89 package, designed for high current applications. It features a high continuous current capability of 5A, a low equivalent on-resistance with RSAT of 30m, and a low saturation voltage of VCE(SAT) < 65mV @ IC = 1A. The transistor also offers specified hFE up to 10A for high current gain hold-up. It is a complementary PNP type to the ZXTP2012Z and is available as a totally lead-free, fully RoHS compliant, and halogen/antimony-free "Green" device. Applications include emergency lighting circuits, motor driving, backlight inverters, power switches, and gate-driving MOSFETs and IGBTs.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT89
  • Package Material: Molded Plastic, "Green" Molding Compound
  • Lead Finish: Matte Tin Plated
  • Certifications: Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Moisture Sensitivity: Level 1 per J-STD-020

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 150 V IC = 100A
Collector-Emitter Breakdown Voltage VCEO 60 V IC = 10mA
Emitter-Base Breakdown Voltage VEBO 7 V IE = 100A
Base Current IB 2 A
Continuous Collector Current IC 5 A
Peak Pulse Current ICM 20 A
Power Dissipation (Note 5) PD 1.5 W
Power Dissipation (Note 6) PD 2.1 W
Thermal Resistance, Junction to Ambient (Note 5) RJA 83 C/W
Thermal Resistance, Junction to Ambient (Note 6) RJA 60 C/W
Thermal Resistance, Junction to Case (Note 5) RJC 5.3 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Electrostatic Discharge - Human Body Model ESD HBM 4000 V JEDEC Class 3A
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC Class C
DC Current Transfer Ratio (hFE) hFE 100-200 IC = 10mA, VCE = 1V
DC Current Transfer Ratio (hFE) hFE 100-300 IC = 2A, VCE = 1V
DC Current Transfer Ratio (hFE) hFE 55-105 IC = 5A, VCE = 1V
DC Current Transfer Ratio (hFE) hFE 20-40 IC = 10A, VCE = 1V
Collector-Emitter Saturation Voltage VCE(sat) < 65 mV IC = 1A, IB = 50mA
Base-Emitter Saturation Voltage VBE(sat) 970-1100 mV IC = 6A, IB = 300mA
Base-Emitter Turn-on Voltage VBE(on) 910-1050 mV IC = 6A, VCE = 1V
Transitional Frequency fT 130 MHz IC = 100mA, VCE = 10V, f = 50MHz
Output Capacitance COBO 31 pF VCB = 10V, f = 1MHz
Switching Time (turn-on) ton 42 ns VCC = 10V, IC = 1A, IB1 = -IB2 = 100mA
Switching Time (turn-off) toff 760 ns VCC = 10V, IC = 1A, IB1 = -IB2 = 100mA

2412251000_DIODES-ZXTN2010ZTA_C122575.pdf


Buy cheap DIODES ZXTN2010Z 60V NPN Transistor SOT89 Package Low Saturation Voltage and High Continuous Current product

DIODES ZXTN2010Z 60V NPN Transistor SOT89 Package Low Saturation Voltage and High Continuous Current Images

Inquiry Cart 0
Send your message to this supplier
 
*From:
*To: Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:
*Message:
Characters Remaining: (0/3000)
 
You May Like