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Shenzhen Haoruijia Elec RS2035H8E series thyristor for solid state relays and dimming control applications

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Shenzhen Haoruijia Elec RS2035H8E series thyristor for solid state relays and dimming control applications

Holding Current (Ih) : 75mA

Current - Gate Trigger(Igt) : 50mA

Voltage - On State(Vtm) : 1.7V

Average Gate Power Dissipation (PG(AV)) : 1W

Current - On State(It(RMS)) : 20A

Peak off - state voltage(Vdrm) : 800V

Current - Surge(Itsm@f) : 200A

Gate Trigger Voltage (Vgt) : 200mV

Description : 75mA 50mA 800V TO-263 TRIACs RoHS

Mfr. Part # : RS2035H8E

Model Number : RS2035H8E

Package : TO-263

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Product Overview

The RS2035H8E series are high-reliability thyristors utilizing advanced glass passivation technology, offering low on-state voltage drop and stable performance. They are primarily used in dimming, temperature control, and voltage regulation circuits. Applications include control circuits for home appliances such as microwave ovens, washing machines, electric fans, and water dispensers, as well as in AC phase control, choppers, inverters, frequency converters, and solid-state relays.

Product Attributes

  • Brand: (Haoruijia)
  • Origin: Shenzhen
  • Model: RS2035H8E-1/-3, RS2035H8E-2/-3, RS2035H8E-3/-3
  • Contact: TEL:+86-0755-89519740, www.sika-wen.com

Technical Specifications

NameSymbolSpecification ValueUnitTest ConditionsQuadrantType
Repetitive Peak Off-State VoltageVDRM/VRRM600/800V-1/-3
RMS On-State CurrentIT(RMS)20ATc=105-1/-3
Surge CurrentITSM200ASinusoidal 60Hz t=8.3ms-1/-3
I2tI2t200A2stp=10ms-1/-3
Critical Rate of Rise of On-State CurrentdI/dt100A/sIG=500mA dIG/dt=1A/s F=50Hz-1/-3
Peak Gate CurrentIGM4ATj=125 tp=20s-1/-3
Peak Gate VoltageVGM16VTj=125-1/-3
Peak Gate PowerPGM5WTj=125-1/-3
Average Gate PowerPG(AV)1WTj=125-1/-3
Junction TemperatureTj125-1/-3
Storage TemperatureTstg-40~150-1/-3
Repetitive Peak Blocking CurrentIDRM/IRRMMAX 10AVDRM=VRRM Tj=25CW-1/-3
Repetitive Peak Blocking CurrentIDRM/IRRMMAX 3mAVDRM=VRRM Tj=125CW-1/-3
On-State VoltageVTMMAX 1.7VIT=28A tp=380sCW-1/-3
Holding CurrentIHMAX 75mAIT=500mACW-1/-3
Latching CurrentILMAX 50mAIG= 1.2IGT--1/-3
Latching CurrentIL90mAIG= 1.2IGT-1/-3
Gate Trigger CurrentIGTMAX 50mAVD=12V RL=30---1/-3
Gate Trigger VoltageVGT1.5V-1/-3
Gate Non-Trigger VoltageVGDMIN 0.2VVD=VDRM RL=3.3K Tj=125-1/-3
Critical Rate of Rise of Off-State VoltagedV/dtMIN 500V/sVDM=67%VDRM Gate open Tj=125-1/-3
Commutation Voltage Critical Rate of Rise(dV/dt)CMIN 18V/s(dI/dt)C=20A/ms Tj=125-1/-3
Repetitive Peak Blocking CurrentIDRM/IRRMMAX 10AVDRM=VRRM Tj=25B-2/-3
Repetitive Peak Blocking CurrentIDRM/IRRMMAX 3mAVDRM=VRRM Tj=125B-2/-3
On-State VoltageVTMMAX 1.7VIT=28A tp=380sB-2/-3
Holding CurrentIHMAX 75mAIT=500mAB-2/-3
Latching CurrentILMAX 50mAIG= 1.2IGT---2/-3
Latching CurrentIL90mAIG= 1.2IGT-2/-3
Gate Trigger CurrentIGTMAX 50mAVD=12V RL=30ALL-2/-3
Gate Trigger VoltageVGT1.5V-2/-3
Gate Non-Trigger VoltageVGDMIN 0.2VVD=VDRM RL=3.3K Tj=125-2/-3
Critical Rate of Rise of Off-State VoltagedV/dtMIN 500V/sVDM=67%VDRM Gate open Tj=125-2/-3
Commutation Voltage Critical Rate of Rise(dV/dt)CMIN 18V/s(dI/dt)C=20A/ms Tj=125-2/-3
Repetitive Peak Blocking CurrentIDRM/IRRMMAX 10AVDRM=VRRM Tj=25B-3/-3
Repetitive Peak Blocking CurrentIDRM/IRRMMAX 3mAVDRM=VRRM Tj=125B-3/-3
On-State VoltageVTMMAX 1.7VIT=28A tp=380sB-3/-3
Holding CurrentIHMAX 75mAIT=500mAB-3/-3
Latching CurrentILMAX 50mAIG= 1.2IGT---3/-3
Latching CurrentIL90mAIG= 1.2IGT-3/-3
Gate Trigger CurrentIGTMAX 50mAVD=12V RL=30ALL-3/-3
Gate Trigger VoltageVGT1.5V-3/-3
Gate Non-Trigger VoltageVGDMIN 0.2VVD=VDRM RL=3.3K Tj=125-3/-3
Critical Rate of Rise of Off-State VoltagedV/dtMIN 500V/sVDM=67%VDRM Gate open Tj=125-3/-3
Commutation Voltage Critical Rate of Rise(dV/dt)CMIN 18V/s(dI/dt)C=20A/ms Tj=125-3/-3

Product Packaging and Storage

Packaging: TO-263 package with 50/strip, 1000/box, 5000/carton. Shipping via express delivery.

Storage Conditions: Temperature: 10-30, Humidity: <60%. Shelf life: One year. Storage status: Warehouse.


2410121243_Shenzhen-Haoruijia-Elec--RS2035H8E_C2931291.pdf


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