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Low Saturation NPN Transistor DIODES FMMT624TA Suitable for High Current Applications and DC DC Modules

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Low Saturation NPN Transistor DIODES FMMT624TA Suitable for High Current Applications and DC DC Modules

Emitter-Base Voltage(Vebo) : 7V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 625mW

Transition frequency(fT) : 155MHz

type : NPN

Number : 1 NPN

Current - Collector(Ic) : 1A

Collector - Emitter Voltage VCEO : 125V

Operating Temperature : -55℃~+150℃

Description : Bipolar (BJT) Transistor NPN 125V 1A 155MHz 625mW Surface Mount SOT-23

Mfr. Part # : FMMT624TA

Model Number : FMMT624TA

Package : SOT-23

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Product Overview

The FMMT624 is a 125V NPN low saturation transistor designed for high current applications. It offers a high continuous collector current of 1A and a peak pulse current of 3A, with a low equivalent on-resistance (RCE(sat) = 160m). This device is suitable for DC-DC/DC-AC modules, regulators, LED drivers, and CCFL backlighting inverters. It is qualified to AEC-Q101 standards for high reliability and is a "Green" device, being totally lead-free and fully RoHS compliant.

Product Attributes

Brand: Diodes Incorporated
Package: SOT23
Material: Molded plastic, "Green" molding compound
Certifications: AEC-Q101, UL Flammability Classification Rating 94V-0, J-STD-020 Moisture Sensitivity Level 1
Compliance: Totally Lead-Free & Fully RoHS compliant, Halogen and Antimony Free ("Green" Device)

Technical Specifications

Characteristic	Symbol	Value	Unit	Test Condition
Collector-Base Breakdown Voltage	BVCBO	125	V	IC = 100A
Collector-Emitter Breakdown Voltage	BVCEO	125	V	IC = 1mA
Emitter-Base Breakdown Voltage	BVEBO	7	V	IE = 100A
Collector Cut-off Current	ICBO	<10	nA	VCB = 100V
Emitter Cut-off Current	IEBO	<10	nA	VEB = 6.0V
Collector Emitter Cut-off Current	ICES	<10	nA	VCES = 100V
Static Forward Current Transfer Ratio	hFE	200 (Typ)	-	IC = 10mA, VCE = 10V
Static Forward Current Transfer Ratio	hFE	300 (Typ)	-	IC = 200mA, VCE = 10V
Static Forward Current Transfer Ratio	hFE	140 (Typ)	-	IC = 1A, VCE = 10V
Static Forward Current Transfer Ratio	hFE	18 (Typ)	-	IC = 3A, VCE = 10V
Collector-Emitter Saturation Voltage	VCE(sat)	26 (Typ)	mV	IC = 0.1A, IB = 10mA
Collector-Emitter Saturation Voltage	VCE(sat)	70 (Typ)	mV	IC = 0.5A, IB = 50mA
Collector-Emitter Saturation Voltage	VCE(sat)	160 (Typ)	mV	IC = 0.5A, IB = 10mA
Collector-Emitter Saturation Voltage	VCE(sat)	165 (Typ)	mV	IC = 1A, IB = 50mA
Base-Emitter Saturation Voltage	VBE(sat)	0.85 (Typ)	V	IC = 1A, IB = 50mA
Base-Emitter Voltage	VBE(on)	0.70 (Typ)	V	IC = 1A, VCE = 10V
Transition Frequency	fT	100 (Min)	MHz	IC = 50mA, VCE = 10V, f = 100MHz
Collector Output Capacitance	Cobo	7 (Typ)	pF	VCB = 10V, f = 1MHz
Turn-On Time	t(on)	60 (Typ)	ns	VCC = 50V, IC = 0.5A, IB1 = -IB2 = 50mA
Turn-Off Time	t(off)	1300 (Typ)	ns	VCC = 50V, IC = 0.5A, IB1 = -IB2 = 50mA
Continuous Collector Current	IC	1	A
Peak Pulse Current	ICM	3	A	(Note 5)
Power Dissipation	PD	625	mW	(Note 5)
Power Dissipation	PD	806	mW	(Note 6)
Thermal Resistance, Junction to Ambient	RJA	200	C/W	(Note 5)
Thermal Resistance, Junction to Ambient	RJA	155	C/W	(Note 6)
Thermal Resistance, Junction to Leads	RJL	194	C/W	(Note 7)
Operating and Storage Temperature Range	TJ, TSTG	-55 to +150	C
Electrostatic Discharge - Human Body Model	ESD HBM	4,000	V	JEDEC Class 3A
Electrostatic Discharge - Machine Model	ESD MM	400	V

1809081626_DIODES-FMMT624TA_C47297.pdf

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