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Silicon Epitaxial Planar Transistor for Amplifier Applications JSMSEMI 2SC3356-R25 VHF UHF CATV Bands

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Silicon Epitaxial Planar Transistor for Amplifier Applications JSMSEMI 2SC3356-R25 VHF UHF CATV Bands

Emitter-Base Voltage(Vebo) : 3V

Current - Collector Cutoff : 1uA

Pd - Power Dissipation : 200mW

Transition frequency(fT) : 7GHz

type : -

Current - Collector(Ic) : 100mA

Collector - Emitter Voltage VCEO : 12V

Operating Temperature : -65℃~+150℃

Description : Bipolar (BJT) Transistor 12V 100mA 7GHz 200mW Surface Mount SOT-23

Mfr. Part # : 2SC3356-R25

Model Number : 2SC3356-R25

Package : SOT-23

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Product Overview

The 2SC3356-R25 is a Silicon Epitaxial Planar Transistor designed for low noise amplifier applications in VHF, UHF, and CATV bands. It offers excellent low noise characteristics (NF=1.1dB TYP.) and high gain (Ga=11dB TYP. @VCE=10V,IC=7mA, f=1.0GHz). It also provides high power gain (MAG=13dB TYP. @VCE=10V,IC=20mA,f=1.0GHz).

Product Attributes

  • Brand: JSMICRO Semiconductor
  • Origin: Not specified
  • Material: Silicon Epitaxial Planar
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest conditionsMINTYPMAXUNIT
Collector-Base VoltageVCBO@ Ta=2520V
Collector-Emitter VoltageVCEO@ Ta=2512V
Emitter-Base VoltageVEBO@ Ta=253V
Collector Current -ContinuousIC@ Ta=25100mA
Collector DissipationPC@ Ta=25200mW
Junction and Storage TemperatureTj,Tstg@ Ta=25-65+150
Collector-base breakdown voltageV(BR)CBOIC=10A,IE=020V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA,IB=012V
Emitter-base breakdown voltageV(BR)EBOIE=10A,IC=03V
Collector cut-off currentICBOVCB=10V,IE=01A
Emitter cut-off currentIEBOVEB=1V,IC=01A
DC current gainhFEVCE=10V,IC=20mA50120300
Transition frequencyfTVCE=10V,IC= 20mA7GHz
Insertion power gain|S21e|2VCE=10V, IC= 20mA , f=1GHz11.5dB
Feed-back capacitanceCreVCB=10V, IE=0,f=1MHz0.551.0pF
Noise FigureNFVCE=10V,IC=7mA, f=1GHz1.12.0dB

2308071511_JSMSEMI-2SC3356-R25_C963378.pdf


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