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PNP Epitaxial Planar Die Construction Transistor GOODWORK MMBT3906T Suitable for Various Applications

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PNP Epitaxial Planar Die Construction Transistor GOODWORK MMBT3906T Suitable for Various Applications

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 150mW

Transition frequency(fT) : 250MHz

type : PNP

Current - Collector(Ic) : 200mA

Collector - Emitter Voltage VCEO : 40V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor PNP 40V 200mA 250MHz 150mW Surface Mount SOT-523

Mfr. Part # : MMBT3906T

Model Number : MMBT3906T

Package : SOT-523

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Product Overview

The MMBT3906T is a PNP Epitaxial Planar Die Construction transistor, offering complementary NPN type availability. It is also available in a lead-free version. This transistor is designed for various applications requiring reliable performance.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Epitaxial Planar Die Construction
Color: Not specified
Certifications: Not specified

Technical Specifications

Symbol	Parameter	Test conditions	Min	Typ	Max	Unit
V(BR)CBO	Collector-base breakdown voltage	IC=-10A,IE=0	-40			V
V(BR)CEO	Collector-emitter breakdown voltage	IC=-1mA,IB=0	-40			V
V(BR)EBO	Emitter-base breakdown voltage	IE=-10A,IC=0	-5			V
ICBO	Collector cut-off current	VCB=-30V,IE=0		-0.1		A
IEBO	Emitter cut-off current	VEB=-5V,IC=0		-0.1		A
hFE	DC current gain	VCE=-1V,IC=-0.1mA	60
		VCE=-1V,IC=-1mA	80
		VCE=-1V,IC=-10mA	100		300
		VCE=-1V,IC=-50mA	60
		VCE=-1V,IC=-100mA	30
VCE(sat)	Collector-emitter saturation voltage	IC=-10mA,IB=-1mA		-0.25		V
VCE(sat)	Collector-emitter saturation voltage	IC=-50mA,IB=-5mA		-0.4		V
VBE(sat)	Base-emitter saturation voltage	IC=-10mA,IB=-1mA	-0.65		-0.85	V
VBE(sat)	Base-emitter saturation voltage	IC=-50mA,IB=-5mA		-0.95		V
fT	Transition frequency	VCE=-20V,IC=-10mA,f=100MHz		250		MHz
Cobo	Collector output capacitance	VCB=-5V,IE=0,f=1MHz		4.5		pF
Ciob	Input capacitance	VEB=-0.5V,IE=0,f=1MHz		10		pF
NF	Noise figure	VCE=-5V,Ic=0.1mA, f		4		dB
td	Delay time	VCC=-3V, VBE(OFF)=-0.5V IC=-10mA , IB1=-1mA		35		ns
td	Delay time	VCC=-3V, VBE(OFF)=-0.5V IC=-10mA , IB1=-1mA	tr	Rise time		35	ns
tS	Storage time	VCC=-3V, IC=-10mA IB1= IB2=-1mA		225		ns
tf	Fall time	VCC=-3V, IC=-10mA IB1= IB2=-1mA		75		ns

2410121513_GOODWORK-MMBT3906T_C22466881.pdf

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