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NPN Bipolar Transistor GOODWORK MMBTA05 in SOT23 Package Designed for Diverse Electronic Applications

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NPN Bipolar Transistor GOODWORK MMBTA05 in SOT23 Package Designed for Diverse Electronic Applications

Emitter-Base Voltage(Vebo) : 4V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 100MHz

type : NPN

Current - Collector(Ic) : 500mA

Collector - Emitter Voltage VCEO : 60V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor NPN 60V 500mA 100MHz 300mW Surface Mount SOT-23

Mfr. Part # : MMBTA05

Model Number : MMBTA05

Package : SOT-23

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Product Overview

The MMBTA05/MMBTA06 are NPN general-purpose bipolar transistors designed for various applications. They offer reliable performance with key electrical characteristics and are housed in a compact SOT-23 package.

Product Attributes

Brand: DEMACHEL
Package Type: SOT-23

Technical Specifications

Characteristic	Symbol	MMBTA05 (min)	MMBTA05 (typ)	MMBTA05 (max)	MMBTA06 (min)	MMBTA06 (typ)	MMBTA06 (max)	Unit
Collector-Base Breakdown Voltage (IC= 100AIE=0)	BVCBO	60			80			V
Collector-Emitter Breakdown Voltage (IC= 10mAIB=0)	BVCEO	60			80			V
Emitter-Base Breakdown Voltage (IE= 100AIC=0)	BVEBO	4			4			V
Collector-Base Leakage Current (VCB=60V,IE=0 for MMBTA05; VCB=80V,IE=0 for MMBTA06)	ICBO			100			100	nA
Collector-Emitter Leakage Current (VCB=60V,IB=0)	ICEO			100			100	nA
Emitter-Base Leakage Current (VEB=4VIC=0)	IEBO			100			100	nA
DC Current Gain (VCE= 1V,IC= 10mA or 100mA)	HFE	100	100	400	100	100	400
Collector-Emitter Saturation Voltage (IC= 100mAIB= 10mA)	VCE(sat)			0.25			0.25	V
Base-Emitter Saturation Voltage (IC= 100mAIB= 10mA)	VBE(sat)			1.2			1.2	V
Base-Emitter On Voltage (VCE= 1VIC= 100mA)	VBE(on)			1.2			1.2	V
Transition Frequency (VCE= 2VIC= 10mA)	fT	100			100			MHZ
Output Capacitance (VCB= 10VIE=0, f=1MHZ)	Cob		10			10		pF

2412231915_GOODWORK-MMBTA05_C42417811.pdf

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