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NPN Silicon Transistor GOODWORK FMMT491 with Improved Breakdown Voltage and Low Saturation Voltage

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NPN Silicon Transistor GOODWORK FMMT491 with Improved Breakdown Voltage and Low Saturation Voltage

Emitter-Base Voltage(Vebo) : 7V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 500mW

Transition frequency(fT) : 150MHz

type : NPN

Current - Collector(Ic) : 1A

Collector - Emitter Voltage VCEO : 60V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor NPN 60V 1A 150MHz 500mW Surface Mount SOT-23

Mfr. Part # : FMMT491

Model Number : FMMT491

Package : SOT-23

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Product Overview

The FMMT491 is an NPN Silicon Epitaxial Planar Transistor designed with improved VCE(sat) and reverse blocking specifications. It is suitable for various electronic applications requiring high performance and reliability.

Product Attributes

  • Brand: DEMACHEL
  • Marking: 491
  • Package: SOT-23

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector- base breakdown voltageVCBOIc= 100 A IE= 080V
Collector- emitter breakdown voltageVCEOIc= 10 mA IB= 060V
Emitter - base breakdown voltageVEBOIE= 100A IC=07V
Collector-base cut-off currentICBOVCB= 60 V , IE= 0100nA
Collector- emitter cut-off currentICESVCE= 60 V , IE= 0100nA
Emitter cut-off currentIEBOVEB= 5.6V , IC=0100nA
Collector-emitter saturation voltageVCE(sat)IC=500 mA, IB=50mA (Note.1)150mV
IC= 1 A, IB=100mA (Note.1)250mV
Base - emitter saturation voltageVBE(sat)IC= 1 A, IB= 100mA (Note.1)1.1V
VCE= 5V, IC= 1 A (Note.1)1.1V
Base-emitter turn-on voltageVBE(on)VCE= 5V, IC= 1 A (Note.1)V
DC current gainhFE(1)VCE= 5V, IC=1mA100
hFE(2)VCE= 5V, IC= 500mA100300
hFE(3)VCE= 5V, IC= 1 A80
hFE(4)VCE= 5V, IC= 2 A30
Collector output capacitanceCobVCB= 10V, f=1MHz10pF
Transition frequencyfTVCE= 10V,Ic=50mA, f=100MHz150MHz

Note.1: Measured under pulsed conditions. Pulse width 300us; duty cycle 2%.


2504101957_GOODWORK-FMMT491_C37331483.pdf


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