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JSMSEMI BC847 JSM NPN transistor suitable for switching amplification and AF input stage applications

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JSMSEMI BC847 JSM NPN transistor suitable for switching amplification and AF input stage applications

Emitter-Base Voltage(Vebo) : 6V

Current - Collector Cutoff : 100nA

Pd - Power Dissipation : 250mW

Transition frequency(fT) : 100MHz

type : NPN

Current - Collector(Ic) : 100mA

Collector - Emitter Voltage VCEO : 45V

Description : Bipolar (BJT) Transistor NPN 45V 0.1A 100MHz 250mW Surface Mount SOT-23

Mfr. Part # : BC847-JSM

Model Number : BC847-JSM

Package : SOT-23

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Product Overview

The BC846/847/848 series are NPN general-purpose transistors designed for a wide range of applications. They offer high current gain, excellent hFE linearity, and low noise characteristics, making them suitable for AF input stages, driver applications, and general-purpose switching and amplification.

Product Attributes

Brand: JSMICRO Semiconductor
Package: SOT-23

Technical Specifications

Type No.	Marking	Collector-Base Voltage (V)	Collector-Emitter Voltage (V)	Emitter-Base Voltage (V)	Collector Current -Continuous (A)	Collector Dissipation (mW)	Junction and Storage Temperature ()	Collector-base breakdown voltage (V)	Collector-emitter breakdown voltage (V)	Emitter-base breakdown voltage (V)	Collector-base cut-off current (nA/uA)	Emitter-base cut-off current (nA)	Collector-emitter cut-off current (mA)	DC current gain (hFE) VCE=5V, IC=10uA	DC current gain (hFE) VCE=5V, IC=2mA	Collector-emitter saturation voltage (V)	Base-emitter saturation voltage (V)	Base-emitter voltage (V)	Collector capacitance (pF)	Transition frequency (MHz)
BC846A/B	1A/1B	80	65	6	0.1	250	-55 to +150	80	65	6	15/5	100	1	110-250	110-200	0.09-0.2	0.7-0.9	0.58-0.66	2.5	100
BC847A/B/C	1E/1F/1G	50	45	6	0.1	250	-55 to +150	50	45	6	15/5	100	1	110-480	110-420	0.09-0.25	0.7-0.9	0.58-0.7	2.5	100
BC848A/B/C	1J/1K/1L	30	30	5	0.1	250	-55 to +150	30	30	5	15/5	100	1	250-480	200-800	0.09-0.6	0.7-1.1	0.66-0.77	2.5	100

2408011047_JSMSEMI-BC847-JSM_C18189051.pdf

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