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High Current Gain Silicon NPN Transistor JSMSEMI 2N3055 Designed for Switching and Amplifier Applications

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High Current Gain Silicon NPN Transistor JSMSEMI 2N3055 Designed for Switching and Amplifier Applications

Current - Collector Cutoff : 700uA

Emitter-Base Voltage(Vebo) : 7V

Pd - Power Dissipation : 115W

Transition frequency(fT) : 2.5MHz

type : NPN

Current - Collector(Ic) : 15A

Collector - Emitter Voltage VCEO : 60V

Operating Temperature : -65℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor NPN 60V 15A 2.5MHz 115W Through Hole TO-3

Mfr. Part # : 2N3055

Model Number : 2N3055

Package : TO-3

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Product Overview

The JSMICRO Semiconductor 2N3055 is a Silicon NPN Power Transistor designed for general-purpose switching and amplifier applications. It offers an excellent Safe Operating Area, a DC Current Gain (hFE) of 20-70 at IC = 4A, and a Collector-Emitter Saturation Voltage (VCE(sat)) of 1.1V (Max) at IC = 4A. It is a complement to the 2N2955 type.

Product Attributes

Brand: JSMICRO Semiconductor
Model: 2N3055
Material: Silicon NPN
Origin: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Symbol	Parameter	Conditions	Min	Max	Unit
VCEO(SUS)	Collector-Emitter Sustaining Voltage	IC=200mA ; IB=0		60	V
VCER(SUS)	Collector-Emitter Sustaining Voltage	IC=200mA ; RBE=100		70	V
VCE(sat)-1	Collector-Emitter Saturation Voltage	IC= 4A; IB= 0.4A		1.1	V
VCE(sat)-2	Collector-Emitter Saturation Voltage	IC= 10A; IB= 3.3A		3.0	V
VBE(on)	Base-Emitter On Voltage	IC= 4A ; VCE= 4V		1.5	V
ICEO	Collector Cutoff Current	VCE= 30V; IB=0		0.7	mA
ICEX	Collector Cutoff Current	VCE= 100V; VBE(off)= 1.5V		1.0	mA
ICEX	Collector Cutoff Current	VCE= 100V; VBE(off)= 1.5V,TC=150		5.0	mA
IEBO	Emitter Cutoff Current	VEB= 7.0V; IC=0		5.0	mA
hFE-1	DC Current Gain	IC= 4A ; VCE= 4V	20	70
hFE-2	DC Current Gain	IC= 10A ; VCE= 4V	5.0
Is/b	Second Breakdown Collector Current with Base Forward Biased	VCE= 40V,t= 1.0s,Nonrepetitive		2.87	A
fT	Current Gain-Bandwidth Product	IC= 0.5A ; VCE= 10V;f=1.0MHz		2.5	MHz
VCBO	Collector-Base Voltage			100	V
VCER	Collector-Emitter Voltage			70	V
VCEO	Collector-Emitter Voltage			60	V
VEBO	Emitter-Base Voltage			7	V
IC	Collector Current-Continuous			15	A
IB	Base Current			7	A
PC	Collector Power Dissipation@TC=25			115	W
TJ	Junction Temperature			200
Tstg	Storage Temperature		-65	200
Rth j-c	Thermal Resistance,Junction to Case			1.52	/W

2401051646_JSMSEMI-2N3055_C2848354.pdf

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