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General purpose switching and amplifier transistor JSMSEMI MMBT2907A PNP type with planar die design

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General purpose switching and amplifier transistor JSMSEMI MMBT2907A PNP type with planar die design

Emitter-Base Voltage(Vebo) : 5V

Current - Collector Cutoff : 20nA

Pd - Power Dissipation : 300mW

Transition frequency(fT) : 200MHz

type : PNP

Current - Collector(Ic) : 600mA

Collector - Emitter Voltage VCEO : 60V

Operating Temperature : -55℃~+150℃@(Tj)

Description : Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 300mW Surface Mount SOT-23

Mfr. Part # : MMBT2907A

Model Number : MMBT2907A

Package : SOT-23

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Product Overview

The MMBT2907A is a PNP general-purpose amplifier and switching transistor featuring epitaxial planar die construction. It is ideal for medium power amplification and switching applications, with a useful dynamic range extending to 600mA as a switch and to 100MHz as an amplifier. A complementary NPN type, the MMBT2222A, is also available.

Product Attributes

Brand: JSMICRO Semiconductor
Package Type: SOT-23
Certifications: JEDEC Class 3A (ESD HBM)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=-10A, IE=0	-60		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-10mA, IB=0	-60		V
Emitter-base breakdown voltage	V(BR)EBO	IE=-10A, IC=0	-5		V
Collector cut-off current	ICBO	VCB=-50V, IE=0		-10	nA
Collector cut-off current	ICBO	VCB=-50V, IE=0, TA=125		-10	A
Collector cut-off current	ICEX	VCE=-30V,VBE(OFF)=-0.5V		-50	nA
Base cut-off current	IBL	VCE=-30V,VBE(OFF)=-0.5V		-50	nA
DC current gain	hFE	VCE=-10V, IC=-100A	75	300
		VCE=-10V, IC=-1mA	100
		VCE=-10V, IC=-10mA	100
		VCE=-10V, IC=-150mA	100
		VCE=-10V, IC=-500mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=-150mA, IB=-15mA		-0.4	V
Collector-emitter saturation voltage	VCE(sat)	IC=-500mA, IB=-50mA		-1.6	V
Base-emitter saturation voltage	VBE(sat)	IC=-150mA, IB=-15mA		-1.3	V
Base-emitter saturation voltage	VBE(sat)	IC=-500mA, IB=-50mA		-2.6	V
Transition frequency	fT	VCE=-20V, IC=-50mA, f=100MHz		200	MHz
Output Capacitance	Cobo	VCB=-10V, f=100kHz, IE=0		8.0	pF
Input Capacitance	Cibo	VEB=-2V, f=100kHz, IC=0		30	pF
Delay time	td	VCE=-30V, IC=-150mA, IB1=-15mA		10	ns
Rise time	tr	VCE=-6V, IC=-150mA, IB1=-IB2=-15mA		40	ns
Storage time	ts	VCE=-6V, IC=-150mA, IB1=-IB2=-15mA		225	ns
Fall time	tf	VCE=-6V, IC=-150mA, IB1=-IB2=-15mA		60	ns

2306301522_JSMSEMI-MMBT2907A_C916373.pdf

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