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PNP Plastic Encapsulated Transistor GOODWORK PBSS5350X-GK for Power Management and Switching Circuits

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PNP Plastic Encapsulated Transistor GOODWORK PBSS5350X-GK for Power Management and Switching Circuits

Current - Collector Cutoff : 100nA

Emitter-Base Voltage(Vebo) : 5V

Pd - Power Dissipation : 550mW

Transition frequency(fT) : 100MHz

type : PNP

Current - Collector(Ic) : 3A

Collector - Emitter Voltage VCEO : 50V

Operating Temperature : -55℃~+150℃@(Tj)

Description : 550mW PNP 3A 50V SOT-89 Single Bipolar Transistors RoHS

Mfr. Part # : PBSS5350X-GK

Model Number : PBSS5350X-GK

Package : SOT-89

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Product Overview

The PBSS5350X is a PNP Plastic-Encapsulated Transistor designed for various applications including supply line switching, battery chargers, DC/DC converters, and LCD backlighting. It offers a low collector-to-emitter saturation voltage, high current capability, and higher efficiency, leading to reduced heat generation and smaller printed-circuit board requirements. This device complements the PBSS4350X and is marked as S46.

Product Attributes

Brand: Not specified
Origin: Not specified
Material: Plastic-Encapsulated
Color: Not specified
Certifications: Not specified

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	BVCBO	IC = -100A, IE = 0	-50			V
Collector-emitter breakdown voltage	BVCEO	IC = -1mA, IB = 0	-50			V
Emitter-base breakdown voltage	BVEBO	IE = -100A, IC = 0	-5			V
Collector cut-off current	ICBO	VCB = -50V, IE = 0			-100	nA
Emitter cut-off current	IEBO	VEB =-5V, IC = 0			-100	nA
DC current gain	hFE	VCE= -2V, IB= -0.1A	200
		VCE= -2V, IB= -0.5A	200
		VCE= -2V, IB= -1A	200	450
		VCE= -2V, IB= -2A	130
		VCE= -2V, IB= -3A	80
Collector-emitter saturation voltage*	VCE(sat)	IC = -500mA, IB = -50mA			-90	mV
		IC = -1A, IB = -50mA			-180
		IC = -2A, IB = -100mA			-320
		IC = -2A, IB = -200mA			-270
		IC = -3A, IB = -300mA			-390
Equivalent on-resistance	RCE(sat)	IC = -2A, IB = -200mA			135	m
Base -emitter saturation voltage*	VBE(sat)	IC = -2A, IB = -100mA			-1.1	V
		IC = -3A, IB = -300mA			-1.2
Base-emitter turn on voltage	VBE(on)	VCE= -2V, IB= -1A			-1.1	V
Transition frequency	fT	VCE = -10V, IE = -100mA f=100MHz		100		MHz
Collector Output Capacitance	Cob	VCB = -10V,IE = 0,f=1MHz		35		pF
Thermal resistance from junction to ambient	Rth(j-a)	in free air; Note1			225	/ W
		Note2			125
		Note3			90
		Note4			80
Thermal resistance from junction to soldering point	Rth(j-s)				16	/ W

2509161435_GOODWORK-PBSS5350X-GK_C51912411.pdf

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