| INVERTER PART |
| Supply Voltage (VPN) | Applied between P NU, NV, NW | | | 450 | V |
| Supply Voltage (VPN surge) | Applied between P NU, NV, NW | | | 550 | V |
| Collector-Emitter Voltage (Vces) | | | | 650 | V |
| Collector Current (Ic) | Each IGBT, Tc = 25C, Tj 150C | | | 75 | A |
| Collector Current (Peak) (Icp) | Each IGBT, Tc = 25C, Tj 150C, Under 1 ms Pulse Width | | | 150 | A |
| Collector Dissipation (Pc) | Tc = 25C per One Chip | | | 223 | W |
| Operating Junction Temperature (Tj) | | -40 | | 150 | C |
| Junction-to-Case Thermal Resistance (Rth(j-c)Q) | Inverter IGBT Part (per 1/6 module) | | | 0.56 | C/W |
| Junction-to-Case Thermal Resistance (Rth(j-c)F) | Inverter FWDi Part (per 1/6 module) | | | 0.84 | C/W |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VDD = VBS = 15 V, IN = 5 A, Ic = 75 A, Tj = 25C | | 1.55 | 2.05 | V |
| FWDi Forward Voltage (VF) | IN = 0 A, Ic = -75 A, Tj = 25C | | 2.05 | 2.55 | V |
| CONTROL PART |
| Control Supply Voltage (VDD) | Applied between VDD(H), VDD(L) VSS | | | 20 | V |
| High-Side Control Bias Voltage (VBS) | Applied between VB(U) VS(U), VB(V) VS(V), VB(W) VS(W) | | | 20 | V |
| Input Signal Voltage (VIN) | Applied between HIN(U), HIN(V), HIN(W), LIN(U), LIN(V), LIN(W) VSS | -0.5 | | VDD+0.5 | V |
| Fault Output Supply Voltage (VFO) | Applied between VFO VSS | -0.5 | | VDD+0.5 | V |
| Fault Output Current (IFO) | Sink Current at VFO pin | | | 5 | mA |
| Current Sensing Input Voltage (VCIN) | Applied between CIN VSS | -0.5 | | VDD+0.5 | V |
| Operating Junction Temperature (Tj) | | -40 | | 150 | C |
| Quiescent VDD Supply Current (IQDDH) | VDD(UH,VH,WH) = 15 V, HIN(U,V,W) = 0 V | | | 0.30 | mA |
| Quiescent VDD Supply Current (IQDDL) | VDD(L) = 15 V, LIN(U,V,W) = 0 V | | | 3.50 | mA |
| Operating VDD Supply Current (IPDDH) | VDD(UH,VH,WH) = 15 V, FPWM = 20 kHz, Duty = 50%, Applied to one PWM Signal Input for High-Side | | | 0.40 | mA |
| Operating VDD Supply Current (IPDDL) | VDD(L) = 15 V, FPWM = 20 kHz, Duty = 50%, Applied to one PWM Signal Input for Low-Side | | | 7.00 | mA |
| Quiescent VBS Supply Current (IQBS) | VDD = VBS = 15 V, HIN(U,V,W) = 0 V | | | 0.30 | mA |
| Operating VBS Supply Current (IPBS) | VDD = VBS = 15 V, FPWM = 20 kHz, Duty = 50%, Applied to one PWM Signal Input for High-Side | | | 6.00 | mA |
| Short Circuit Trip Level (VSC(ref)) | VDD = 15 V, CIN VSS(L) | 0.46 | 0.48 | 0.50 | V |
| BOOSTSTRAP DIODE PART |
| Maximum Repetitive Reverse Voltage (VRRM) | | | | 650 | V |
| Operating Junction Temperature (Tj) | | -40 | | 150 | C |
| TOTAL SYSTEM |
| Self-Protection Supply Voltage Limit (VPN(PROT)) | Short-Circuit Protection Capability, VDD = VBS = 13.5~16.5 V, Tj = 150C, Vces < 650 V, Non-Repetitive, < 2 s | | | 400 | V |
| Module Case Operation Temperature (Tc) | | -40 | | 125 | C |
| Storage Temperature (Tstg) | | -40 | | 125 | C |
| Isolation Voltage (Viso) | 60 Hz, Sinusoidal, AC 1 Minute, Connection Pins to Heat Sink Plate | 2500 | | | Vrms |
