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Built in bias resistor transistors Nexperia PUMD6 115 ideal for simplifying digital circuit designs

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Built in bias resistor transistors Nexperia PUMD6 115 ideal for simplifying digital circuit designs

Emitter-Base Voltage VEBO : 5V

Input Resistor : 4.7kΩ

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount TSSOP-6(SOT-363)

Mfr. Part # : PUMD6,115

Model Number : PUMD6,115

Package : TSSOP-6(SOT-363)

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Product Overview

The PEMD6 and PUMD6 are NPN/PNP resistor-equipped transistors designed to simplify circuit design and reduce component count. Featuring built-in bias resistors (R1 = 4.7 k, R2 = open), these devices offer reduced pick and place costs and are ideal for low current peripheral driver applications, replacement of general-purpose transistors in digital applications, and control of IC inputs.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Type: NPN/PNP resistor-equipped transistors
  • Bias Resistor R1: 4.7 k
  • Bias Resistor R2: Open
  • Origin: Made in Hong Kong (* = p), Made in Malaysia (* = t)

Technical Specifications

Type Number Package Marking Code NPN/NPN Complement PNP/PNP Complement EIAJ
PEMD6 SOT666 D6 PHILIPS PEMH7 PEMB3
PUMD6 SOT363 (SC-88) D*6(1) PUMH7 PUMB3
Symbol Parameter Conditions Min. Typ. Max. Unit
Quick Reference Data
VCEO Collector-emitter voltage 50 V
IO Output current (DC) 100 mA
R1 Bias resistor 4.7 k
Limiting Values
VCBO Collector-base voltage (PNP with negative polarity) Open emitter 50 V
VCEO Collector-emitter voltage Open base 50 V
VEBO Emitter-base voltage Open collector 5 V
IO Output current (DC) 100 mA
ICM Peak collector current 100 mA
Ptot Total power dissipation Tamb 25 C; SOT363 (note 1) 200 mW
Tamb 25 C; SOT666 (notes 1 and 2) 200 mW
Ptot Total power dissipation (Per device) Tamb 25 C; SOT363 (note 1) 300 mW
Tamb 25 C; SOT666 (notes 1 and 2) 300 mW
Tstg Storage temperature 65 +150 C
Tj Junction temperature 150 C
Tamb Operating ambient temperature 65 +150 C
Thermal Characteristics
Rth(j-a) Thermal resistance from junction to ambient (note 1) SOT363 625 K/W
SOT666 625 K/W
Rth(j-a) Thermal resistance from junction to ambient (note 1, Per device) SOT363 416 K/W
SOT666 416 K/W
Characteristics
ICBO Collector-base cut-off current (PNP) VCB = 50 V; IE = 0 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 1 A
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0; Tj = 150 C 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 100 nA
hFE DC current gain VCE = 5 V; IC = 1 mA 200
VCEsat Collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA 100 mV
R1 Input resistor 3.3 4.7 6.1 k
Cc Collector capacitance IE = Ie = 0; VCB = 10 V; f = 1 MHz
Cc (TR1 NPN) 2.5 pF
Cc (TR2 PNP) 3 pF
Pin Description PEMD6; PUMD6
1 Emitter TR1
2 Base TR1
3 Collector TR2
4 Emitter TR2
5 Base TR2
6 Collector TR1

2410121943_Nexperia-PUMD6-115_C455000.pdf


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