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NPN Silicon Transistor Infineon BCR 135 E6327 Designed for Switching Inverter and Driver Applications

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NPN Silicon Transistor Infineon BCR 135 E6327 Designed for Switching Inverter and Driver Applications

Input Resistor : 13kΩ

Resistor Ratio : 0.24

Collector - Emitter Voltage VCEO : 50V

Description : 50V SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

Mfr. Part # : BCR 135 E6327

Model Number : BCR 135 E6327

Package : SOT-23

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Product Overview

The BCR135 is a NPN Silicon Digital Transistor designed for switching circuits, inverters, interface circuits, and driver circuits. It features built-in bias resistors (R1=10 k, R2=47 k). The BCR135S variant offers two internally isolated transistors with good matching in a single multichip package. These components are Pb-free (RoHS compliant) and qualified according to AEC Q101.

Product Attributes

Brand: Infineon Technologies
Material: Silicon
Certifications: AEC Q101, RoHS compliant

Technical Specifications

Type	Marking	Package	VCEO (V)	VCBO (V)	IC (mA)	Ptot (mW)	Tj (C)	Tstg (C)	RthJS (K/W)	V(BR)CEO (V)	V(BR)CBO (V)	ICBO (nA)	IEBO (A)	hFE	VCEsat (V)	Vi(off) (V)	Vi(on) (V)	R1 (k)	R1/R2	fT (MHz)	Ccb (pF)
BCR135	WJs	SOT23	50	50	100	200 (TS 102C)	150	-65 ... 150	240	50	50	-100	-167	70 (IC=5mA, VCE=5V)	-0.3 (IC=10mA, IB=0.5mA)	0.5 (IC=100A, VCE=5V)	0.5 (IC=2mA, VCE=0.3V)	7-13	0.19-0.24	150 (IC=10mA, VCE=5V, f=100MHz)	3 (VCB=10V, f=1MHz)
BCR135W	WJs	SOT323	50	50	100	250 (TS 124C)	150	-65 ... 150	105	50	50	-100	-167	70 (IC=5mA, VCE=5V)	-0.3 (IC=10mA, IB=0.5mA)	0.5 (IC=100A, VCE=5V)	0.5 (IC=2mA, VCE=0.3V)	7-13	0.19-0.24	150 (IC=10mA, VCE=5V, f=100MHz)	3 (VCB=10V, f=1MHz)
BCR135S	WJs	SOT363	50	50	100	250 (TS 115C)	150	-65 ... 150	140	50	50	-100	-167	70 (IC=5mA, VCE=5V)	-0.3 (IC=10mA, IB=0.5mA)	0.5 (IC=100A, VCE=5V)	0.5 (IC=2mA, VCE=0.3V)	7-13	0.19-0.24	150 (IC=10mA, VCE=5V, f=100MHz)	3 (VCB=10V, f=1MHz)

2304140030_Infineon-BCR-135-E6327_C533831.pdf

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