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Nexperia PUMH20 115 NPN resistor equipped transistor for low current peripheral driving applications

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Nexperia PUMH20 115 NPN resistor equipped transistor for low current peripheral driving applications

Input Resistor : 2.86kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-363

Mfr. Part # : PUMH20,115

Model Number : PUMH20,115

Package : SOT-363

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Product Overview

The PEMH20 and PUMH20 are NPN/NPN resistor-equipped transistors designed to simplify circuit design and reduce component count. Featuring built-in bias resistors (R1 = 2.2 k, R2 = 2.2 k), these devices are ideal for low current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications. They offer reduced pick-and-place costs and are available in SOT666 and SOT363 packages.

Product Attributes

  • Brand: NXP Semiconductors
  • Type: NPN/NPN resistor-equipped transistors
  • Bias Resistor R1: 2.2 k
  • Bias Resistor R2: 2.2 k

Technical Specifications

Type Number Package NPN/PNP Complement PNP/PNP Complement JEITA Marking Code
PEMH20 SOT666 PEMD20 PEMB20 - 6K
PUMH20 SOT363 (SC-88) PUMD20 PUMB20 - H7*
Symbol Parameter Conditions Min Typ Max Unit
Quick Reference Data
VCEO Collector-emitter voltage open base - - 50 V
IO Output current (DC) - - - 100 mA
R1 Bias resistor 1 (input) - 1.54 2.2 2.86 k
R2/R1 Bias resistor ratio - 0.8 1 1.2 -
Limiting values
VCBO Collector-base voltage open emitter - - 50 V
VCEO Collector-emitter voltage open base - - 50 V
VEBO Emitter-base voltage open collector - - 10 V
VI Input voltage positive - - +12 V
VI Input voltage negative - - 10 V
IO Output current (DC) - - - 100 mA
ICM Peak collector current - - - 100 mA
Ptot Total power dissipation Tamb 25 C, SOT363 - - 200 mW
Tamb 25 C, SOT666 - - 200 mW
Tstg Storage temperature - -65 - +150 C
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - +150 C
Ptot Total power dissipation (per device) Tamb 25 C, SOT363 - - 300 mW
Tamb 25 C, SOT666 - - 300 mW
Thermal characteristics
Rth(j-a) Thermal resistance from junction to ambient in free air SOT363 - - 625 K/W
SOT666 - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air (per device) SOT363 - - 416 K/W
SOT666 - - 416 K/W
Characteristics
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 1 A
VCE = 30 V; IB = 0 A; Tj = 150 C - - 50 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A - - 2 mA
hFE DC current gain VCE = 5 V; IC = 20 mA 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA - - 150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 1 mA - 1.2 0.5 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 20 mA 2 1.6 - V
R1 Bias resistor 1 (input) - 1.54 2.2 2.86 k
R2/R1 Bias resistor ratio - 0.8 1 1.2 -
Cc Collector capacitance VCB = 10 V; IE = ie = 0 A; f = 1 MHz - - 2.5 pF

Applications

  • Low current peripheral driver
  • Control of IC inputs
  • Replacement of general-purpose transistors in digital applications

2410121742_Nexperia-PUMH20-115_C455006.pdf


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