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Nexperia PUMB1 115 PNP PNP Double Resistor Equipped Transistors Integrating Built In Bias Resistors

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Nexperia PUMB1 115 PNP PNP Double Resistor Equipped Transistors Integrating Built In Bias Resistors

Output Voltage(VO(on)) : -

Input Resistor : 22kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : 50V SOT-363 Single, Pre-Biased Bipolar Transistors RoHS

Mfr. Part # : PUMB1,115

Model Number : PUMB1,115

Package : SOT-363

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Nexperia PEMB1; PUMB1 PNP/PNP Resistor-Equipped Transistors

Product Overview

The Nexperia PEMB1 and PUMB1 are PNP/PNP double Resistor-Equipped Transistors (RET) designed for surface-mounting applications. These devices integrate built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. They offer a 100 mA output current capability and are AEC-Q101 qualified, making them suitable for automotive and industrial applications such as low-current peripheral driving and control of IC inputs.

Product Attributes

Brand: Nexperia
Type: PNP/PNP double Resistor-Equipped Transistors (RET)
Certifications: AEC-Q101 qualified
Resistor Values: R1 = 22 k, R2 = 22 k

Technical Specifications

Symbol	Parameter	Conditions	Min	Typ	Max	Unit
Per transistor
VCEO	Collector-emitter voltage	open base	-	-	-50	V
IO	Output current	-	-	-	-100	mA
R1	Bias resistor 1 (input)	-	15.4	22	28.6	k
R2/R1	Bias resistor ratio	-	0.8	1	1.2	-
VCBO	Collector-base voltage	open emitter	-	-	-50	V
VEBO	Emitter-base voltage	open collector	-	-	-10	V
VI	Input voltage	positive	-	-	+10	V
VI	Input voltage	negative	-	-	-40	V
ICM	Peak collector current	single pulse; tp 1 ms	-	-	-100	mA
Tj	Junction temperature	-	-	-	150	C
Tamb	Ambient temperature	-	-65	-	+150	C
Tstg	Storage temperature	-	-65	-	+150	C
Rth(j-a)	Thermal resistance junction to ambient	PEMB1 (SOT666)	-	-	625	K/W
Rth(j-a)	Thermal resistance junction to ambient	PUMB1 (SOT363)	-	-	625	K/W
ICBO	Collector-base cut-off current	VCB = -50 V; IE = 0 A	-	-	-100	nA
ICEO	Collector-emitter cut-off current	VCE = -30 V; IB = 0 A	-	-	-100	nA
ICEO	Collector-emitter cut-off current	VCE = -30 V; IB = 0 A; Tj = 150 C	-	-	-5	A
IEBO	Emitter-base cut-off current	VEB = -5 V; IC = 0 A	-	-	-180	A
hFE	DC current gain	VCE = -5 V; IC = -5 mA	60	-	-	-
VCEsat	Collector-emitter saturation voltage	IC = -10 mA; IB = -0.5 mA	-	-	-150	mV
VI(off)	Off-state input voltage	VCE = -5 V; IC = -100 A	-	-1.1	-0.8	V
VI(on)	On-state input voltage	VCE = -0.3 V; IC = -5 mA	-2.5	-1.7	-	V
Cc	Collector capacitance	VCB = -10 V; IE = ie = 0 A; f = 1 MHz	-	-	3	pF
fT	Transition frequency	VCE = -5 V; IC = -10 mA; f = 100 MHz	-	180	-	MHz
Per device
Ptot	Total power dissipation	Tamb 25 C; PEMB1 (SOT666)	-	-	200	mW
Ptot	Total power dissipation	Tamb 25 C; PUMB1 (SOT363)	-	-	200	mW
Ptot	Total power dissipation	Tamb 25 C; PEMB1 (SOT666)	-	-	300	mW
Ptot	Total power dissipation	Tamb 25 C; PUMB1 (SOT363)	-	-	300	mW
Rth(j-a)	Thermal resistance junction to ambient	PEMB1 (SOT666)	-	-	417	K/W
Rth(j-a)	Thermal resistance junction to ambient	PUMB1 (SOT363)	-	-	417	K/W
Models & Packages
Type number	Package Name	Package Description	-	-	-	-
PEMB1	SOT666	6 leads, ultra small and flat lead plastic surface-mounted package	-	-	-	-
PUMB1	SOT363	6 leads, very small SC-88 plastic surface-mounted package	-	-	-	-

Applications

Low current peripheral driver
Control of IC inputs
Replaces general-purpose transistors in digital applications

2504101957_Nexperia-PUMB1-115_C553484.pdf

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