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CBI DTC114EE NPN Silicon Epitaxial Planar Digital Transistor Featuring Built in Bias Resistors for Switching

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CBI DTC114EE NPN Silicon Epitaxial Planar Digital Transistor Featuring Built in Bias Resistors for Switching

Input Resistor : 13kΩ

Resistor Ratio : 1

Collector - Emitter Voltage VCEO : 50V

Description : Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-523

Mfr. Part # : DTC114EE

Model Number : DTC114EE

Package : SOT-523

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Product Overview

The MMDTC114EE is an NPN Silicon Epitaxial Planar Digital Transistor designed with built-in bias resistors. This feature simplifies circuit design by reducing the quantity of external components and streamlining the manufacturing process. It is suitable for applications requiring digital switching and signal amplification.

Product Attributes

Type: NPN Silicon Epitaxial Planar Digital Transistor
Built-in Components: Bias resistors
Design Advantage: Simplified circuit design, reduced part count, and simplified manufacturing process

Technical Specifications

Parameter	Symbol	Value	Unit
Absolute Maximum Ratings (Ta = 25)
Collector Emitter Voltage	VCEO	50	V
Input Voltage	VI	-10 to +40	V
Collector Current	IC	100	mA
Power Dissipation	Ptot	150	mW
Junction Temperature	Tj	150
Storage Temperature Range	Tstg	-55 to +150
Characteristics at Ta = 25
DC Current Gain at VCE = 5 V, IC = 5 mA	hFE	30	-
Collector Base Cutoff Current at VCB = 50 V	ICBO	-	500 nA
Emitter Base Cutoff Current at VEB = 5 V	IEBO	-	0.88 mA
Collector Emitter Saturation Voltage at IC = 10 mA, IB = 0.5 mA	VCE(sat)	-	0.3 V
Input on Voltage at VCE = 0.3 V, IC = 10 mA	VI(on)	-	3 V
Input off Voltage at VCE = 5 V, IC = 100 A	VI(off)	0.5	- V
Transition frequency at VCE = 10 V, -IE = 5 mA, f = 100 MHz	fT	-	250 MHz
Input Resistance	R1	7 to 13	K
Resistance Ratio	R2 / R1	0.8 to 1.2	-

2410121306_CBI-DTC114EE_C2828438.pdf

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