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Output Voltage(VO(on)) : 200mV
Collector - Emitter Voltage VCEO : 50V
Description : 50V SOT-23 Single, Pre-Biased Bipolar Transistors RoHS
Mfr. Part # : MMUN2216
Model Number : MMUN2216
Package : SOT-23
This NPN Silicon Epitaxial Planar Transistor is designed for switching, interface circuit, and drive circuit applications. It features integrated resistors for base and emitter, simplifying circuit design and reducing component count. Available in a SOT-23 plastic package, these transistors offer reliable performance for various electronic systems.
| Model | R1 (Input) (K) | R2 (K) | Marking | hFE (VCE=10V, IC=5mA) Min. | ICBO (VCB=50V) Max. (nA) | ICEO (VCE=50V) Max. (nA) | IEBO (VEB=6V) Max. (mA) | V(BR)CBO (IC=10A) Min. (V) | V(BR)CEO (IC=2mA) Min. (V) | VCEsat (IC=10mA, IB=0.3mA) Max. (V) | VCEsat (IC=10mA, IB=5mA) Max. (V) | VCEsat (IC=10mA, IB=1mA) Max. (V) | VOL (VCC=5V, RL=1K) Max. (V) | VOH (VCC=5V, RL=1K) Min. (V) | R1 (K) Min. | R1 (K) Max. | R1/R2 Ratio Min. | R1/R2 Ratio Max. |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| MMUN2211 | 10 | 10 | A8B | 35 | 100 | 500 | 0.5 | 50 | 50 | - | - | - | 0.2 | 4.9 | 7 | 13 | 0.8 | 1.2 |
| MMUN2212 | 22 | 22 | A8A | 60 | 100 | 500 | 0.2 | 50 | 50 | - | - | - | 0.2 | 4.9 | 15.4 | 28.6 | 0.25 | 0.25 |
| MMUN2213 | 47 | 47 | A8C | 80 | 100 | 500 | 0.1 | 50 | 50 | - | - | - | 0.2 | 4.9 | 32.9 | 61.1 | - | - |
| MMUN2214 | 10 | 47 | A8D | 80 | 100 | 500 | 0.2 | 50 | 50 | - | - | - | 0.2 | 4.9 | 7 | 13 | 0.17 | 0.185 |
| MMUN2215 | 10 | A8E | 160 | 100 | 500 | 0.9 | 50 | 50 | 0.25 | - | - | 0.2 | 4.9 | 7 | 13 | - | 0.56 | |
| MMUN2216 | 4.7 | A8F | 160 | 100 | 500 | 1.9 | 50 | 50 | 0.25 | - | - | 0.2 | 4.9 | 3.3 | 6.1 | - | 0.056 | |
| MMUN2230 | 1 | 1 | A8G | 3 | 100 | 500 | 4.3 | 50 | 50 | 0.25 | - | - | 0.2 | 4.9 | 0.7 | 1.3 | 0.8 | 1.2 |
| MMUN2231 | 2.2 | 2.2 | A8H | 8 | 100 | 500 | 2.3 | 50 | 50 | 0.25 | - | - | 0.2 | 4.9 | 1.5 | 2.9 | 0.055 | 0.185 |
| MMUN2232 | 4.7 | 4.7 | A8J | 15 | 100 | 500 | 1.5 | 50 | 50 | 0.25 | - | - | 0.2 | 4.9 | 3.3 | 6.1 | 0.38 | 0.56 |
| MMUN2233 | 4.7 | 47 | A8K | 80 | 100 | 500 | 0.18 | 50 | 50 | 0.25 | - | - | 0.2 | 4.9 | 4.7 | 47 | 0.1 | 0.1 |
| MMUN2234 | 22 | 47 | A8L | 80 | 100 | 500 | 0.13 | 50 | 50 | 0.25 | - | - | 0.2 | 4.9 | 15.4 | 28.6 | 0.038 | 0.056 |
| MMUN2235 | 2.2 | 47 | A8M | 80 | 100 | 500 | 0.2 | 50 | 50 | 0.25 | - | - | 0.2 | 4.9 | 1.54 | 2.88 | - | - |
| MMUN2238 | 2.2 | A8R | 160 | 100 | 500 | 4 | 50 | 50 | 0.25 | - | - | 0.2 | 4.9 | 1.54 | 2.88 | - | - | |
| MMUN2241 | 100 | A8U | 160 | 100 | 500 | 0.1 | 50 | 50 | - | - | - | 0.2 | 4.9 | 70 | 130 | - | - |
| Absolute Maximum Ratings (Ta = 25 C) | Symbol | Value | Unit |
|---|---|---|---|
| Collector Base Voltage | VCBO | 50 | V |
| Collector Emitter Voltage | VCEO | 50 | V |
| Collector Current | IC | 100 | mA |
| Total Power Dissipation | Ptot | 200 | mW |
| Junction Temperature | Tj | 150 | C |
| Storage Temperature Range | TS | -55 to +150 | C |
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NPN Silicon Epitaxial Planar Transistor CBI MMUN2216 with Integrated Base Emitter Resistors Included Images |