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NPN Silicon Epitaxial Planar Transistor CBI MMUN2216 with Integrated Base Emitter Resistors Included

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NPN Silicon Epitaxial Planar Transistor CBI MMUN2216 with Integrated Base Emitter Resistors Included

Output Voltage(VO(on)) : 200mV

Collector - Emitter Voltage VCEO : 50V

Description : 50V SOT-23 Single, Pre-Biased Bipolar Transistors RoHS

Mfr. Part # : MMUN2216

Model Number : MMUN2216

Package : SOT-23

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Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for switching, interface circuit, and drive circuit applications. It features integrated resistors for base and emitter, simplifying circuit design and reducing component count. Available in a SOT-23 plastic package, these transistors offer reliable performance for various electronic systems.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Silicon Epitaxial Planar
  • Package: SOT-23 Plastic Package

Technical Specifications

Model R1 (Input) (K) R2 (K) Marking hFE (VCE=10V, IC=5mA) Min. ICBO (VCB=50V) Max. (nA) ICEO (VCE=50V) Max. (nA) IEBO (VEB=6V) Max. (mA) V(BR)CBO (IC=10A) Min. (V) V(BR)CEO (IC=2mA) Min. (V) VCEsat (IC=10mA, IB=0.3mA) Max. (V) VCEsat (IC=10mA, IB=5mA) Max. (V) VCEsat (IC=10mA, IB=1mA) Max. (V) VOL (VCC=5V, RL=1K) Max. (V) VOH (VCC=5V, RL=1K) Min. (V) R1 (K) Min. R1 (K) Max. R1/R2 Ratio Min. R1/R2 Ratio Max.
MMUN2211 10 10 A8B 35 100 500 0.5 50 50 - - - 0.2 4.9 7 13 0.8 1.2
MMUN2212 22 22 A8A 60 100 500 0.2 50 50 - - - 0.2 4.9 15.4 28.6 0.25 0.25
MMUN2213 47 47 A8C 80 100 500 0.1 50 50 - - - 0.2 4.9 32.9 61.1 - -
MMUN2214 10 47 A8D 80 100 500 0.2 50 50 - - - 0.2 4.9 7 13 0.17 0.185
MMUN2215 10 A8E 160 100 500 0.9 50 50 0.25 - - 0.2 4.9 7 13 - 0.56
MMUN2216 4.7 A8F 160 100 500 1.9 50 50 0.25 - - 0.2 4.9 3.3 6.1 - 0.056
MMUN2230 1 1 A8G 3 100 500 4.3 50 50 0.25 - - 0.2 4.9 0.7 1.3 0.8 1.2
MMUN2231 2.2 2.2 A8H 8 100 500 2.3 50 50 0.25 - - 0.2 4.9 1.5 2.9 0.055 0.185
MMUN2232 4.7 4.7 A8J 15 100 500 1.5 50 50 0.25 - - 0.2 4.9 3.3 6.1 0.38 0.56
MMUN2233 4.7 47 A8K 80 100 500 0.18 50 50 0.25 - - 0.2 4.9 4.7 47 0.1 0.1
MMUN2234 22 47 A8L 80 100 500 0.13 50 50 0.25 - - 0.2 4.9 15.4 28.6 0.038 0.056
MMUN2235 2.2 47 A8M 80 100 500 0.2 50 50 0.25 - - 0.2 4.9 1.54 2.88 - -
MMUN2238 2.2 A8R 160 100 500 4 50 50 0.25 - - 0.2 4.9 1.54 2.88 - -
MMUN2241 100 A8U 160 100 500 0.1 50 50 - - - 0.2 4.9 70 130 - -
Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit
Collector Base Voltage VCBO 50 V
Collector Emitter Voltage VCEO 50 V
Collector Current IC 100 mA
Total Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 C
Storage Temperature Range TS -55 to +150 C

2509181520_CBI-MMUN2216_C51814067.pdf


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