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MICROCHIP MV2N5116UBTR P channel J FET low profile UB package device with high reliability screening

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MICROCHIP MV2N5116UBTR P channel J FET low profile UB package device with high reliability screening

Ciss-Input Capacitance : 27pF@15V

Operating Temperature : -65℃~+200℃@(Tj)

Pd - Power Dissipation : 500mW

Drain Current (Idss) : 5mA@15V

FET Type : -

RDS(on) : 175Ω

Gate-Source Breakdown Voltage (Vgss) : 30V

Gate-Source Cutoff Voltage (VGS(off)) : 1V@1nA

Description : 500mW 5mA@15V 175Ω 30V SMD-3P JFETs RoHS

Mfr. Part # : MV2N5116UB/TR

Model Number : MV2N5116UB/TR

Package : SMD-3P

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Product Overview

This low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile UB package and is a surface mount equivalent to JEDEC registered 2N5114 thru 2N5116 series. RoHS compliant versions are available for commercial grade applications.

Product Attributes

Brand: Microsemi Corporation
Package: UB Package (Surface Mount), TO-18 (Leaded)
Material: Ceramic case with Gold Plating over Nickel underplate terminals (RoHS compliant Matte/Tin available on commercial grade only)
Certifications: Screening in reference to MIL-PRF-19500 available
Compliance: RoHS compliant versions available (commercial grade only)

Technical Specifications

Part Number	Gate-Source Breakdown Voltage (V(BR)GSS) @ IG = 1.0 A	Drain-Source "On" State Voltage (VDS(on)) @ ID = -15 mA (VGS=0)	Gate Reverse Current (IGSS) @ VDS = 0, VGS = 20 V	Drain Current Cutoff (ID(off)) @ VGS = 12 V, VDS = -15 V	Zero Gate Voltage Drain Current (IDSS) @ VGS = 0, VDS = -18V	Gate-Source Cutoff (VGS(off)) @ VDS = -15, ID = -1.0 nA	Small-Signal Drain-Source "On" State Resistance (rds(on)1) @ VGS = 0, ID = -1.0 mA	Small-Signal Drain-Source "On" State Resistance (rds(on)2) @ VGS = 0, ID = 0; f = 1 kHz	Small-Signal Reverse Transfer Capacitance (Crss) @ f = 1.0 MHz	Small-Signal Input Capacitance (Ciss) @ f = 1.0 MHz	Turn-On Delay Time (Td(on))	Rise Time (tr)	Turn-Off Delay Time (Td(off))
2N5114UB	30 V	-1.3 V	500 pA	-500 pA	-30 mA	5.0 V (10 V)	75	75	7.0 pF	25 pF	6 s	10 s	6 s
2N5115UB	30 V	-0.8 V	500 pA	-500 pA	-15 mA	3.0 V (6.0 V)	100	100	7.0 pF	25 pF	10 s	20 s	8 s
2N5116UB	30 V	-0.6 V	500 pA	-500 pA	-5.0 mA (-90 mA)	1.0 V (4.0 V)	175	175	7.0 pF	27 pF	25 s	35 s	20 s

2410311727_MICROCHIP-MV2N5116UB-TR_C17533753.pdf

MICROCHIP MV2N5116UBTR P channel J FET low profile UB package device with high reliability screening Images

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