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Ciss-Input Capacitance : 25pF@15V
Operating Temperature : -65℃~+200℃@(Tj)
Pd - Power Dissipation : 500mW
FET Type : -
Drain Current (Idss) : 15mA@15V
RDS(on) : 100Ω
Gate-Source Breakdown Voltage (Vgss) : 30V
Gate-Source Cutoff Voltage (VGS(off)) : 3V@1nA
Description : 500mW 15mA@15V 100Ω 30V SMD-3P JFETs RoHS
Mfr. Part # : MV2N5115UB/TR
Model Number : MV2N5115UB/TR
Package : SMD-3P
This low-profile surface mount P-CHANNEL J-FET is available in military equivalents for high-reliability applications. It offers a low-profile ceramic surface mount package and is suitable for various voltage regulation applications. RoHS compliant versions are available for commercial grade applications.
| Part Number | VGS (V) | VDS (V) | IG (mA) | PD @ TA = +25C (W) | V(BR)GSS (V) | VGS(off) (V) | IDSS (mA) | Crss (pF) | Ciss (pF) | rds(on)1 () | rds(on)2 () | Td(on) (ns) | tr (ns) | Td(off) (ns) |
| 2N5114UB | 30 | 30 | 50 | 0.500 | 30 | 1.0 - 5.0 | -5.0 to -90 | 7.0 | 25 | 75 | 75 | 6 | 10 | 6 |
| 2N5115UB | 30 | 30 | 50 | 0.500 | 30 | 3.0 - 6.0 | -15 to -60 | 7.0 | 25 | 100 | 100 | 10 | 20 | 8 |
| 2N5116UB | 30 | 30 | 50 | 0.500 | 30 | 4.0 - 10 | -30 to -25 | 7.0 | 27 | 175 | 175 | 25 | 35 | 20 |
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RoHS compliant ceramic package P channel J FET MICROCHIP MV2N5115UB TR designed for high reliability Images |