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Electromagnetic Interference Resistant SCR FUXINSEMI BT169D Suitable for AC Motor Speed Regulation

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Electromagnetic Interference Resistant SCR FUXINSEMI BT169D Suitable for AC Motor Speed Regulation

Holding Current (Ih) : 4mA

Current - Gate Trigger(Igt) : 200uA

Voltage - On State(Vtm) : 1.5V

Average Gate Power Dissipation (PG(AV)) : 100mW

Current - On State(It(RMS)) : 800mA

Peak off - state voltage(Vdrm) : 600V

Current - Surge(Itsm@f) : 8A@50Hz

SCR Type : -

Operating Temperature : -

Gate Trigger Voltage (Vgt) : 800mV

Description : SCR 600V 0.8A Through Hole TO-92

Mfr. Part # : BT169D

Model Number : BT169D

Package : TO-92

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Product Overview

The BT169D Series are 0.8A sensitive gate SCRs designed for applications requiring high shock loading capability and strong resistance to electromagnetic interference. They offer a high dv/dt rate and are suitable for power chargers, T-tools, massagers, solid-state relays, and AC motor speed regulation.

Product Attributes

Brand: FS
Origin: www.fuxinsemi.com
Package: TO-92

Technical Specifications

Symbol	Parameter	Value	Unit	Test Condition	Min	Max
VDRM	Repetitive peak off-state voltage	600 / 800	V
VRRM	Repetitive peak reverse voltage	600 / 800	V
IT(RMS)	RMS on-state current	0.8	A
ITSM	Non repetitive surge peak on-state current (full cycle, F=50Hz)	8	A
I2t	I2t value for fusing (tp=10ms)	0.32	A2s
dIT/dt	Critical rate of rise of on-state current (IG =2IGT)	50	A/s
IGM	Peak gate current	1	A
PG(AV)	Average gate power dissipation	0.1	W
TJ	Junction Temperature	-40 ~ +110
TSTG	Storage Temperature	-40 ~ +150
IGT	Gate trigger current	10	A	VD =12V IT=10mA Tj =25		200
VGT	Gate trigger voltage		V			0.8
VGD	Gate non-trigger voltage	0.2	V	VD =1/2VDRM Tj =110
IL	Latching current		mA	VD =12V IG=0.5mA RGK=1k Tj =25		3
IH	Holding current		mA			4
dVD/dt	Critical-rate of rise of commutation voltage	10	V/s	VD=2/3VDRM Gate Open Tj =110
VTM	Forward "on" voltage		V	ITM =1.2A tp=380s		1.5
IDRM	Repetitive Peak Off-State Current		A	VD =VDRM VR =VRRM Tj=25		5
IRRM	Repetitive Peak Reverse Current		mA	Tj=110		0.1
Rth(j-c)	Junction to case	60	/W	TYP.
Rth(j-a)	Junction to ambient	150	/W	TYP.

2409300133_FUXINSEMI-BT169D_C784598.pdf

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