| Repetitive peak off-state voltage (VDRM) | 400-800 | V | Note 1 |
| Non-repetitive peak off-state voltage (VDSM) | 400-800 | V | Note 1 |
| Repetitive peak reverse voltage (VRRM) | 400-800 | V | Note 1 |
| Non-repetitive peak reverse voltage (VRSM) | 500-900 | V | Note 1 |
| Mean on-state current (IT(AV)) | 366 | A | Tsink=55C, Note 2 |
| Mean on-state current (IT(AV)) | 130 | A | Tsink=85C, Note 2 |
| Nominal RMS on-state current (IT(RMS)) | 756 | A | Tsink=25C, Note 2 |
| D.C. on-state current (IT(d.c.)) | 590 | A | Tsink=25C, Note 4 |
| Peak non-repetitive surge (ITSM) tp=10ms | 4700 | A | VRM=0.6VRRM, Note 5 |
| Peak non-repetitive surge (ITSM2) tp=10ms | 5170 | A | VRM10V, Note 5 |
| I2t capacity for fusing (I2t) tp=10ms | 11010 | As | VRM=0.6VRRM, Note 5 |
| I2t capacity for fusing (I2t) tp=10ms | 13410 | As | VRM10V, Note 5 |
| Maximum rate of rise of on-state current (di/dt)cr (repetitive) | 500 | A/s | Note 6 |
| Maximum rate of rise of on-state current (di/dt)cr (non-repetitive) | 1000 | A/s | Note 6 |
| Peak forward gate voltage (VFGM) | 12 | V | |
| Peak forward gate current (IFGM) | 18 | A | |
| Peak reverse gate voltage (VRGM) | 5 | V | |
| Mean forward gate power (PG(AV)) | 1.5 | W | |
| Peak forward gate power (PGM) (100s pulse width) | 60 | W | |
| Non-trigger gate voltage (VGD) | 0.25 | V | Note 7 |
| Operating temperature range (THS) | -40 to +125 | C | |
| Storage temperature range (Tstg) | -40 to +150 | C | |
| Maximum peak on-state voltage (VTM) | 1.88 | V | ITM=715A |
| Threshold voltage (VT0) | 1.4 | V | |
| Slope resistance (rT) | 0.67 | m | |
| Critical rate of rise of off-state voltage ((dv/dt)cr) | 200 | V/s | VD=80% VDRM |
| Peak off-state current (IDRM) | 30 | mA | Rated VDRM |
| Peak reverse current (IRRM) | 30 | mA | Rated VRRM |
| Gate trigger voltage (VGT) | 3.0 | V | Tj=25C |
| Gate trigger current (IGT) | 200 | mA | Tj=25C, VD=6V, IT=1A |
| Holding current (IH) | 600 | mA | Tj=25C |
| Recovered charge (Qrr) | 25 | C | ITM=300A, tp=500s, di/dt=20A/s, Vr=50V |
| Recovered charge, 50% Chord (Qra) | 10 | C | |
| Turn-off time (tq) | 15-30 | s | ITM=300A, tp=500s, di/dt=20A/s, Vr=50V, Vdr=80%VDRM, dVdr/dt=20V/s |
| Turn-off time (tq) | 10-15 | s | ITM=300A, tp=500s, di/dt=50A/s, Vr=50V, Vdr=80%VDRM, dVdr/dt=200V/s |
| Thermal resistance, junction to heatsink (RthJK) (Double side cooled) | 0.095 | K/W | |
| Thermal resistance, junction to heatsink (RthJK) (Single side cooled) | 0.190 | K/W | |
| Mounting force (F) | 3.3-5.5 | kN | |
| Weight (Wt) | 70 | g | |
