Home > SCRs >

sensitive gate triac DIODES T12M5T600B with glass passivated junctions and 600 volts blocking voltage

Product Categories

Bridge Rectifiers [1296]
Single Bipolar Transistors [2284]
JFETs [73]
Power Driver Modules [154]
Current Regulation - Diodes, Transistors [4]
Single IGBTs [550]
DIACs, SIDACs [39]
Single, Pre-Biased Bipolar Transistors [1371]
SCRs [158]
SCRs - Modules [48]
TRIACs [559]
RF Diodes [12]
Single Diodes [3000]
Single Zener Diodes [3000]
Variable Capacitance (Varicaps, Varactors) [79]
Single FETs, MOSFETs [3000]

Hefei Purple Horn E-Commerce Co., Ltd.

Trust Seal

Verified Supplier

Credit Check

Supplier Assessment

Contact Now

sensitive gate triac DIODES T12M5T600B with glass passivated junctions and 600 volts blocking voltage

Description : SCRs RoHS

Mfr. Part # : T12M5T600B

Model Number : T12M5T600B

Contact Now

Product Overview

The T12M5T600B(LS) is a sensitive gate triac, a silicon bidirectional thyristor designed for high-performance applications. It offers a blocking voltage up to 600V and a high surge current capability of 90 Amperes. Featuring glass-passivated junctions for enhanced reliability and uniformity, this triac is operational in three quadrants (Q1, Q2, and Q3). It is RoHS compliant and a "Green" device, free from Halogen and Antimony. The TO-220AB package ensures ease of design and integration.

Product Attributes

Brand: Diodes Incorporated
Package: TO-220AB
Material: Molded Plastic, "Green" Molding Compound
Color: "Green" (referring to material classification)
Certifications: RoHS Compliant

Technical Specifications

Parameter	Symbol	Value	Unit	Conditions
Peak repetitive off-state voltage	VDRM, VRRM	600	Volts	(TJ = -40 to +110C, sine wave, 50 to 60Hz; gate open)
On-stage RMS current	IT(RMS)	12	Amp	(full sine wave 50 to 60Hz, TC = +70C)
Peak non-repetitive surge current	ITSM	90	Amps	(one full cycle 60Hz, TJ = +25C)
Circuit fusing consideration	I2t	33	A2s	(t = 8.3ms)
Operating junction temperature range	TJ	-40 to +110	C
Storage temperature range	TSTG	-40 to +150	C
Peak repetitive forward or reverse blocking current	IDRM, IRRM	10 (TJ = +25C), 2 (TJ = +110C)	A, mA	(VAK = rated VDRM and VRRM, gate open)
Peak forward on-state voltage	VTM	1.85	Volts	(ITM = 12A Peak @ tP 2.0ms, duty cycle 2%)
Gate trigger current	IGT1, IGT2, IGT3	5	mA	(VD = 12V, RL = 100)
Gate trigger voltage	VGT1, VGT2, VGT3	1.5	Volts	(VD = 12V, RL = 100)
Latching Current	IL1, IL2, IL3	15, 20, 15	mA	(VD = 12 V, IG = 5 mA)
Holding current	IH	10	mA	(VD = 12V, initiation current = 200mA, gate open)
Critical Rate of Rise of Off-State Voltage	dv/dt	15	V/us	(VD = 67% Rated VDRM, Exponential Waveform, gate open, TJ = +110C)

2412251012_DIODES-T12M5T600B_C17563833.pdf

sensitive gate triac DIODES T12M5T600B with glass passivated junctions and 600 volts blocking voltage Images

Inquiry Cart 0

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Hefei Purple Horn E-Commerce Co., Ltd.
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!