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Industrial Triac WEIDA BTB04-600BW Featuring 4 Amp RMS Current and 600 Volt Repetitive Peak Voltage

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Industrial Triac WEIDA BTB04-600BW Featuring 4 Amp RMS Current and 600 Volt Repetitive Peak Voltage

Holding Current (Ih) : 60mA

Current - Gate Trigger(Igt) : 50mA

Voltage - On State(Vtm) : 1.5V

Average Gate Power Dissipation (PG(AV)) : 1W

Current - On State(It(RMS)) : 4A

Peak off - state voltage(Vdrm) : 600V

Current - Surge(Itsm@f) : 40A

SCR Type : -

Operating Temperature : -40℃~+125℃

Gate Trigger Voltage (Vgt) : 1.5V

Description : TRIAC 600V 4A Surface Mount TO-252

Mfr. Part # : BTB04-600BW

Model Number : BTB04-600BW

Package : TO-252

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Jiangsu Weida Semiconductor Co., Ltd. BTA04/BTB04 Series 4A Triacs

The BTA04/BTB04 series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for high shock loading capability with a large current capacity. They offer a high dv/dt rate with strong resistance to electromagnetic interference and excellent commutation performance. These 3-quadrant devices are particularly recommended for inductive loads. The BTA04 series provides a rated insulation voltage of 2500 VRMS, complying with UL standards (File ref: E516503), with all three terminals isolated from the heatsink.

Product Attributes

Brand: Jiangsu Weida Semiconductor Co., Ltd.
Product Series: BTA04/BTB04 Series
Certifications: UL (File ref: E516503)

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
RMS On-State Current	IT(RMS)	4	A
Repetitive Peak Off-State Voltage	VDRM	600/800	V	(Tj=25)
Repetitive Peak Reverse Voltage	VRRM	600/800	V	(Tj=25)
Non-Repetitive Surge Peak On-State Current	ITSM	40	A	(full cycle, F=50Hz)
I2t Value for Fusing	I2t	8	As	(tp=10ms)
Critical Rate of Rise of On-State Current	dI/dt	50	A/s	(IG=2IGT)
Peak Gate Current	IGM	4	A
Average Gate Power Dissipation	PG(AV)	1	W
Peak Gate Power	PGM	5	W
Storage Junction Temperature Range	Tstg	-40~150
Operating Junction Temperature Range	Tj	-40~125
On-State Voltage (Max)	VTM	1.5	V	(ITM=5.5A, tp=380s, Tj=25)
Off-State Current (Max)	IDRM/IRRM	5	A	(VDRM=VRRM, Tj=25)
Off-State Current (Max)	IDRM/IRRM	0.5	mA	(VDRM=VRRM, Tj=125)
Junction to Case Thermal Resistance (AC)	Rth(j-c)	2.5-3.4	/W	(Package dependent: TO-220B, TO-220A, TO-220F)
Junction to Case Thermal Resistance (AC)	Rth(j-c)	2.8	/W	(TO-251-4R/TO-252-4R)

Electrical Characteristics (Tj=25 unless otherwise specified)

3 Quadrants

Parameter	Test Condition	Quadrant	Value	Unit
Gate Trigger Current	VD=12V, RL=33	--	MAX 5	mA
Gate Trigger Current	VD=12V, RL=33	TW	MAX 10	mA
Gate Trigger Current	VD=12V, RL=33	SW	MAX 35	mA
Gate Trigger Current	VD=12V, RL=33	CW	MAX 50	mA
Gate Trigger Current	VD=12V, RL=33	BW	MAX 50	mA
Gate Trigger Voltage		--	1.5	V
Gate Non-Trigger Voltage	VD=VDRM	--	MIN 0.2	V
Holding Current	IT=100mA	MAX 6	mA
Holding Current	IT=100mA	TW	MAX 10	mA
Holding Current	IT=100mA	SW	MAX 35	mA
Holding Current	IT=100mA	CW	MAX 60	mA
Holding Current	IT=100mA	BW	MAX 50	mA
Latching Current	IG=1.2IGT	-	MAX 10	mA
Latching Current	IG=1.2IGT		MAX 15	mA
Latching Current	IG=1.2IGT	TW	MAX 15	mA
Latching Current	IG=1.2IGT	SW	MAX 50	mA
Latching Current	IG=1.2IGT	CW	MAX 70	mA
Latching Current	IG=1.2IGT	BW	MAX 80	mA
Critical Rate of Rise of Off-State Voltage	VD=2/3VDRM, Tj=125, Gate open	MIN 50	V/s
Critical Rate of Rise of Off-State Voltage	VD=2/3VDRM, Tj=125, Gate open	TW	MIN 100	V/s
Critical Rate of Rise of Off-State Voltage	VD=2/3VDRM, Tj=125, Gate open	SW	MIN 500	V/s
Critical Rate of Rise of Off-State Voltage	VD=2/3VDRM, Tj=125, Gate open	CW	MIN 1000	V/s
Critical Rate of Rise of Off-State Voltage	VD=2/3VDRM, Tj=125, Gate open	BW	MIN 1000	V/s

4 Quadrants

Parameter	Test Condition	Quadrant	Value	Unit
Gate Trigger Current	VD=12V, RL=33	--	MAX 25	mA
Gate Trigger Current	VD=12V, RL=33	C	MAX 50	mA
Gate Trigger Current	VD=12V, RL=33	B	MAX 70	mA
Gate Trigger Voltage		ALL	1.5	V
Gate Non-Trigger Voltage	VD=VDRM	ALL	MIN 0.2	V
Holding Current	IT=100mA	MAX 40	mA
Holding Current		C	MAX 60	mA
Holding Current		B	MAX 90	mA
Latching Current	IG=1.2IGT	--	MAX 50	mA
Latching Current	IG=1.2IGT	C	MAX 70	mA
Latching Current	IG=1.2IGT	B	MAX 90	mA
Critical Rate of Rise of Off-State Voltage	VD=2/3VDRM, Tj=125, Gate open	MIN 200	V/s
Critical Rate of Rise of Off-State Voltage	VD=2/3VDRM, Tj=125, Gate open	C	MIN 500	V/s
Critical Rate of Rise of Off-State Voltage	VD=2/3VDRM, Tj=125, Gate open	B	MIN 500	V/s

2410122027_WEIDA-BTB04-600BW_C2901054.pdf

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