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40A Triacs WEIDA BTA41-800B Series Suitable for High Current Switching and Inductive Load Applications

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40A Triacs WEIDA BTA41-800B Series Suitable for High Current Switching and Inductive Load Applications

Holding Current (Ih) : 60mA

Current - Gate Trigger(Igt) : 50mA

Voltage - On State(Vtm) : 1.55V

Average Gate Power Dissipation (PG(AV)) : 1W

Current - On State(It(RMS)) : 40A

Peak off - state voltage(Vdrm) : 800V

Current - Surge(Itsm@f) : 400A

SCR Type : 1 TRIAC

Gate Trigger Voltage (Vgt) : 1.3V

Operating Temperature : -40℃~+125℃

Description : TRIAC 800V 40A Through Hole TO-3P

Mfr. Part # : BTA41-800B

Model Number : BTA41-800B

Package : TO-3P

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Product Overview

The Jiangsu Weida Semiconductor BTA41 Series 40A Triacs are designed for high current shock loading applications, offering a high dv/dt rate and strong resistance to electromagnetic interference. These triacs feature excellent commutation performance, with 3-quadrant products specifically recommended for inductive loads. They provide an insulation voltage of 2500V RMS from all terminals to the heatsink, complying with UL standards.

Product Attributes

Brand: Jiangsu Weida Semiconductor Co., Ltd.
Series: BTA41 Series
Product Type: Triacs
Current Rating: 40A
Certifications: UL standards (for insulation voltage)

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
RMS On-State Current	IT(RMS)	40.0	A
Repetitive Peak Off-State Voltage	VDRM	600/800/1200/1600	V	(Tj=25)
Repetitive Peak Reverse Voltage	VRRM	600/800/1200/1600	V	(Tj=25)
Non-Repetitive Surge Peak On-State Current	ITSM	400	A	(full cycle, F=50Hz)
I2t Value for Fusing	I2t	880	A2s	(tp=10ms)
Critical Rate of Rise of On-State Current	dI/dt	50	A/s	(IG=2IGT)
Peak Gate Current	IGM	4	A
Average Gate Power Dissipation	PG(AV)	1	W
Peak Gate Power	PGM	10	W
Storage Junction Temperature Range	Tstg	-40~150
Operating Junction Temperature Range	Tj	-40~125
Gate Trigger Current (3 Quadrants)	IGT	MAX 50	mA	VD=12V, RL=33
Gate Trigger Voltage (3 Quadrants)	VGT	1.3	V
Gate Non-Trigger Voltage (3 Quadrants)	VGD	MIN 0.2	V	VD=VDRM, Tj=125
Holding Current (3 Quadrants)	IH	MAX 60	mA	IT=100mA
Latching Current (Quadrant II, 3 Quadrants)	IL	100	mA	IG=1.2IGT
Critical dV/dt (3 Quadrants)	dV/dt	MIN 1000	V/s	VD=2/3VDRM, Tj=125, Gate open
Gate Trigger Current (4 Quadrants)	IGT	MAX 50 (I-II-III), MAX 70 (IV)	mA	VD=12V, RL=33
Gate Trigger Voltage (4 Quadrants)	VGT	1.3	V	ALL Quadrants
Gate Non-Trigger Voltage (4 Quadrants)	VGD	MIN 0.2	V	VD=VDRM, Tj=125, ALL Quadrants
Holding Current (4 Quadrants)	IH	MAX 60	mA	IT=100mA
Latching Current (Quadrants I-III-IV, 4 Quadrants)	IL	MAX 80	mA	IG=1.2IGT
Latching Current (Quadrant II, 4 Quadrants)	IL	100	mA	IG=1.2IGT
Critical dV/dt (4 Quadrants)	dV/dt	MIN 1000	V/s	VD=2/3VDRM, Tj=125, Gate open
On-State Voltage	VTM	MAX 1.55	V	ITM=60A, tp=380s, Tj=25
Off-State Current (IDRM/IRRM)	IDRM/IRRM	MAX 10 (Tj=25), MAX 5 (Tj=125)	A	VDRM= VRRM
Thermal Resistance (Junction to Case, AC) TO-3P(Ins)	Rth(j-c)	1.1	/W
Thermal Resistance (Junction to Case, AC) TO-247(Non-Ins)	Rth(j-c)	0.91	/W
Thermal Resistance (Junction to Case, AC) TG-C	Rth(j-c)	0.65	/W

2410122017_WEIDA-BTA41-800B_C2915232.pdf

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