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Triacs WEIDA BTA41 800BW Series Featuring 2500V RMS Insulation Voltage and Strong EMI Resistance

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Triacs WEIDA BTA41 800BW Series Featuring 2500V RMS Insulation Voltage and Strong EMI Resistance

Holding Current (Ih) : 60mA

Current - Gate Trigger(Igt) : 50mA

Voltage - On State(Vtm) : 1.55V

Average Gate Power Dissipation (PG(AV)) : 1W

Current - On State(It(RMS)) : 40A

Peak off - state voltage(Vdrm) : 800V

Current - Surge(Itsm@f) : 400A

Operating Temperature : -40℃~+125℃

Gate Trigger Voltage (Vgt) : 1.3V

Description : 800V 40A Through Hole TO-3P

Mfr. Part # : BTA41-800BW

Model Number : BTA41-800BW

Package : TO-3P

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Product Overview

The Jiangsu Weida Semiconductor BTA41 Series 40A Triacs are designed for high-current shock loading, offering a high dv/dt rate and strong resistance to electromagnetic interference. These triacs feature excellent commutation performance, with 3-quadrant products particularly recommended for inductive loads. They provide an insulation voltage rated at 2500V RMS from all terminals to an external heatsink, complying with UL standards.

Product Attributes

Brand: Jiangsu Weida Semiconductor Co., Ltd.
Series: BTA41 Series
Product Type: Triacs
Certifications: UL Standards (for insulation voltage)

Technical Specifications

Parameter	Symbol	Value	Unit	Notes
RMS On-State Current	IT(RMS)	40.0	A
Repetitive Peak Off-State Voltage / Repetitive Peak Reverse Voltage	VDRM/VRRM	600/800/1200/1600	V	(Tj=25)
Non-Repetitive Surge Peak On-State Current	ITSM	400	A	(full cycle, F=50Hz)
I2t Value for Fusing	I2t	880	A2s	(tp=10ms)
Critical Rate of Rise of On-State Current	dI/dt	50	A/s	(IG=2IGT)
Peak Gate Current	IGM	4	A
Average Gate Power Dissipation	PG(AV)	1	W
Peak Gate Power	PGM	10	W
Storage Junction Temperature Range	Tstg	-40~150
Operating Junction Temperature Range	Tj	-40~125
On-State Voltage (Max)	VTM	1.55	V	(ITM=60A, tp=380s, Tj=25)
Off-State Current (Max)	IDRM/IRRM	10	A	(VDRM=VRRM, Tj=25)
Off-State Current (Max)	IDRM/IRRM	5	mA	(VDRM=VRRM, Tj=125)
Junction to Case Thermal Resistance (AC)	Rth(j-c)	1.1	/W	TO-3P(Ins)
Junction to Case Thermal Resistance (AC)	Rth(j-c)	0.91	/W	TO-247(Non-Ins)
Junction to Case Thermal Resistance (AC)	Rth(j-c)	0.80	/W	TG-C
Gate Trigger Current (Max)	IGT	50	mA	(VD=12V, RL=33, Quadrants --)
Gate Trigger Voltage (Max)	VGT	1.3	V
Gate Non-Trigger Voltage (Min)	VGD	0.2	V	(VD=VDRM, Tj=125)
Holding Current (Max)	IH	60	mA	(IT=100mA)
Latching Current (Max)	IL	80	mA	(IG=1.2IGT, Quadrants -)
Latching Current (Max)	IL	100	mA	(IG=1.2IGT, Quadrant )
Critical Rate of Rise of Commutation Voltage (Min)	dV/dt	1000	V/s	(VD=2/3VDRM, Tj=125, Gate open)

Ordering Information Example: BTA41-800BW (Triac, 40A, 800V, IGT1-350mA)

Package Type Codes: A: TO-220A(Ins), B: TO-220A(Non-Ins)
VDRM/VRRM Codes: 600, 800, 1200, 1600
IGT Codes: B (IGT1-350mA, IGT4100mA), BW (IGT1-350mA)

2411010951_WEIDA-BTA41-800BW_C42374854.pdf

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