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Drain to Source Voltage : 60V
Current - Continuous Drain(Id) : 100A
Operating Temperature - : -55℃~+150℃@(Tj)
RDS(on) : 5.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)) : 3V
Reverse Transfer Capacitance (Crss@Vds) : 50pF@30V
Number : 1 P-Channel
Input Capacitance(Ciss) : 5.2nF@30V
Pd - Power Dissipation : 210W
Gate Charge(Qg) : 85nC@10V
Description : P-Channel 60V 100A 210W Surface Mount TO-263
Mfr. Part # : HSH100P06
Model Number : HSH100P06
Package : TO-263
The HSH100P06 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDSON and gate charge, making it suitable for synchronous buck converter applications. This product meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
| Parameter | Value |
|---|---|
| Model | HSH100P06 |
| Drain-Source Voltage (VDS) | -60 V |
| Continuous Drain Current (ID) | -100 A |
| Storage Temperature Range | -55 to 150 |
| Fast Switching | Yes |
| Application Suitability | Synchronous Buck Converter Applications |
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synchronous buck converter P channel MOSFET HUASHUO HSH100P06 with full function reliability approval Images |