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Drain to Source Voltage : 40V
Current - Continuous Drain(Id) : 80A
Operating Temperature - : -55℃~+175℃
RDS(on) : 3.8mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)) : 1.9V
Reverse Transfer Capacitance (Crss@Vds) : -
Number : 1 N-channel
Pd - Power Dissipation : 62.5W
Input Capacitance(Ciss) : 2.27nF
Gate Charge(Qg) : 60nC@10V
Description : N-Channel 40V 80A 62.5W Surface Mount TO-252-2L
Mfr. Part # : HYG037N04LR1D
Model Number : HYG037N04LR1D
Package : TO-252-2L
The HYG037N04LR1D is a single N-Channel Enhancement Mode MOSFET designed for various applications including load switches and lithium battery protection boards. It features low on-state resistance (RDS(ON)= 3.8 m typ. @VGS = 10V), 100% avalanche tested, and is reliable and rugged. Halogen-free devices are available, complying with RoHS standards.
| Part Number | Feature | RDS(ON) @ VGS=10V (typ.) | RDS(ON) @ VGS=4.5V (typ.) | VDSS | ID (Tc=25) | Application |
| HYG037N04LR1D | Single N-Channel Enhancement Mode MOSFET | 3.8 m | 6.1 m | 40V | 80A | Load Switch, Lithium battery protect board |
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Low Resistance Single N Channel MOSFET HYG037N04LR1D Suitable for Load Switch and Battery Protection Images |