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Fast Switching N Channel MOSFET HSBA6032 Featuring High Cell Density Trench Technology and Operation

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Fast Switching N Channel MOSFET HSBA6032 Featuring High Cell Density Trench Technology and Operation

Drain to Source Voltage : 60V

Current - Continuous Drain(Id) : 60A

Operating Temperature - : -55℃~+150℃

RDS(on) : 7.1mΩ@10V,20A

Gate Threshold Voltage (Vgs(th)) : 1.2V

Reverse Transfer Capacitance (Crss@Vds) : 151pF@30V

Number : 1 N-channel

Input Capacitance(Ciss) : 3.307nF@30V

Pd - Power Dissipation : 52W

Gate Charge(Qg) : 57nC@10V

Description : N-Channel 60V 60A 52W PRPAK5x6-8L

Mfr. Part # : HSBA6032

Model Number : HSBA6032

Package : PRPAK5x6-8L

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Product Overview

The HSBA6032 is a high cell density trenched N-channel Fast Switching MOSFET designed for synchronous buck converter applications. It offers excellent R_DS(ON) and gate charge characteristics. This product meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. Its advanced high cell density Trench technology contributes to its superior performance.

Product Attributes

Brand: HS-Semi
Product Type: N-Channel MOSFET
Switching Speed: Fast Switching
Technology: Advanced high cell density Trench technology
Certifications: RoHS, Green Product
Reliability: 100% EAS Guaranteed, Full function reliability approved

Technical Specifications

Product Summary	Symbol	Parameter	Conditions	Min.	Typ.	Max.	Unit
HSBA6032	BVDSS	Drain-Source Breakdown Voltage	VGS=0V , ID=250uA	60	---	---	V
	RDS(ON)	Static Drain-Source On-Resistance	VGS=10V , ID=20A	---	7.1	8.5	m
			VGS=4.5V , ID=15A	---	9.5	12	m
	VGS(th)	Gate Threshold Voltage	VGS=VDS , ID =250uA	1.2	---	2.5	V
	IDSS	Drain-Source Leakage Current	VDS=48V , VGS=0V , TJ=25	---	---	1	uA
			VDS=48V , VGS=0V , TJ=55	---	---	5	uA
	IGSS	Gate-Source Leakage Current	VGS=20V , VDS=0V	---	---	100	nA
	Rg	Gate Resistance	VDS=0V , VGS=0V , f=1MHz	---	1.2	---
	Qg	Total Gate Charge (10V)	VDS=30V , VGS=10V , ID=20A	---	57	---	nC
	Qgs	Gate-Source Charge		---	8.7	---	nC
	Qgd	Gate-Drain Charge		---	14	---	nC
	Td(on)	Turn-On Delay Time	VDD=30V , VGS=10V , RG=3.3, ID=20A	---	16.2	---	ns
	Tr	Rise Time		---	41.2	---	ns
	Td(off)	Turn-Off Delay Time		---	56.4	---	ns
	Tf	Fall Time		---	16.2	---	ns
	Ciss	Input Capacitance	VDS=30V , VGS=0V , f=1MHz	---	3307	---	pF
	Coss	Output Capacitance		---	201	---	pF
	Crss	Reverse Transfer Capacitance		---	151	---	pF
	IS	Continuous Source Current	VG=VD=0V , Force Current	---	---	60	A
	VSD	Diode Forward Voltage	VGS=0V , IS=1A , TJ=25	---	---	1.2	V
	trr	Reverse Recovery Time	IF=20A , dI/dt=100A/s , TJ=25	---	22	---	nS
	Qrr	Reverse Recovery Charge		---	72	---	nC

Parameter	Rating	Units
VDS	Drain-Source Voltage	60	V
VGS	Gate-Source Voltage	20	V
ID@TC=25	Continuous Drain Current, VGS @ 10V¹	60	A
ID@TC=100	Continuous Drain Current, VGS @ 10V¹	38	A
IDM	Pulsed Drain Current²	280	A
EAS	Single Pulse Avalanche Energy³	80	mJ
IAS	Avalanche Current	40	A
PD@TC=25	Total Power Dissipation⁴	52	W
TSTG	Storage Temperature Range	-55 to 150
TJ	Operating Junction Temperature Range	-55 to 150

Thermal Data	Parameter	Conditions	Typ.	Max.	Unit
	RJA	Thermal Resistance Junction-ambient¹	---	62	/W
	RJC	Thermal Resistance Junction-case¹	---	2.4	/W

Package	Dimensions
PRPAK5X6	(See attached diagram)

2409291036_HUASHUO-HSBA6032_C508830.pdf

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