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N channel MOSFET Jilin Sino Microelectronics JCS4N60VC IPAK for in electronic ballasts and LED drivers

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N channel MOSFET Jilin Sino Microelectronics JCS4N60VC IPAK for in electronic ballasts and LED drivers

Drain to Source Voltage : 600V

Current - Continuous Drain(Id) : 4A

Operating Temperature - : -55℃~+150℃

RDS(on) : 2.5Ω@10V

Gate Threshold Voltage (Vgs(th)) : 4V@250uA

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 15pF

Number : -

Input Capacitance(Ciss) : 860pF

Output Capacitance(Coss) : 100pF

Pd - Power Dissipation : 159.2W

Gate Charge(Qg) : 25nC@480V

Description : 600V 4A 2.5Ω@10V 4V@250uA 159.2W TO-251 Single FETs, MOSFETs RoHS

Mfr. Part # : JCS4N60VC-IPAK

Model Number : JCS4N60VC-IPAK

Package : TO-251

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Product Overview

The JCS4N60C is a N-channel enhancement mode MOSFET designed for high-frequency switching power supplies, electronic ballasts, and LED power supplies. It features low gate charge, low Crss, fast switching speed, 100% avalanche tested, and improved dv/dt capability. This RoHS compliant product is available in various package types.

Product Attributes

Brand: JCS
Origin: China
Certifications: RoHS

Technical Specifications

Order Code	Marking	Package	ID (A)	VDSS (V)	Rdson (Typ) ()	Rdson (Max) ()	Qg-typ (nC)
JCS4N60VC-V-B / JCS4N60VC-V-BR	N/A	IPAK	4.0	600	2.0	2.5	17.5
JCS4N60VC-V2-B / JCS4N60VC-V2-BR	N/A	IPAK-S2	4.0	600	2.0	2.5	17.5
JCS4N60CC-C-B / JCS4N60CC-C-BR	N/A	TO-220C	4.0	600	2.0	2.5	17.5
JCS4N60FC-F-B / JCS4N60FC-F-BR	N/A	TO-220MF	4.0	600	2.0	2.5	17.5
JCS4N60FC-F2-B / JCS4N60FC-F2-BR	N/A	TO-220MF-K2	4.0	600	2.0	2.5	17.5
JCS4N60RC-R-B / JCS4N60RC-R-BR / JCS4N60RC-R-A / JCS4N60RC-R-AR	JCS4N60R	DPAK	4.0	600	2.0	2.5	17.5
JCS4N60BC-B-B / JCS4N60BC-B-BR	N/A	TO-262	4.0	600	2.0	2.5	17.5

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Off Characteristics
Drain-Source Voltage	BVDSS	ID=250A, VGS=0V	600	-	-	V
Breakdown Voltage Temperature Coefficient	BVDSS/ TJ	ID=250A, referenced to 25	-	0.6	-	V/
Zero Gate Voltage Drain Current	IDSS	VDS=600V,VGS=0V, TC=25	-	-	10	A
Zero Gate Voltage Drain Current	IDSS	VDS=480V, TC=125	-	-	100	A
Gate-body leakage current, forward	IGSSF	VDS=0V, VGS =30V	-	-	100	nA
Gate-body leakage current, reverse	IGSSR	VDS=0V, VGS =-30V	-	-	-100	nA
On-Characteristics
Gate Threshold Voltage	VGS(th)	VDS = VGS , ID=250A	2.0	-	4.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=2.0A, 25	-	2.0	2.5
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=2.0A, 100	-	3.5	4.1
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V , ID=2.0A, 150	-	5.2	5.8
Forward Transconductance	gfs	VDS = 40V , ID=2.0A	-	1.8	-	S
Dynamic Characteristics
Gate resistance	Rg	F=1.0MHZ open drain	-	0.8	5.5
Input capacitance	Ciss	VDS=25V, VGS =0V, f=1.0MHZ	-	642.1	860	pF
Output capacitance	Coss	VDS=25V, VGS =0V, f=1.0MHZ	-	70.82	100	pF
Reverse transfer capacitance	Crss	VDS=25V, VGS =0V, f=1.0MHZ	-	3.06	15	pF
Switching Characteristics
Turn-On delay time	td(on)	VDD=300V,ID=4.0A,RG=25	-	9.6	20	ns
Turn-On rise time	tr	VDD=300V,ID=4.0A,RG=25	-	23.6	50	ns
Turn-Off delay time	td(off)	VDD=300V,ID=4.0A,RG=25	-	38.8	80	ns
Turn-Off Fall time	tf	VDD=300V,ID=4.0A,RG=25	-	26.4	70	ns
Total Gate Charge	Qg	VDS =480V , ID=4.0A, VGS =10V	-	17.5	25	nC
Gate-Source charge	Qgs	VDS =480V , ID=4.0A, VGS =10V	-	4.3	8	nC
Gate-Drain charge	Qgd	VDS =480V , ID=4.0A, VGS =10V	-	4.66	9	nC
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain -Source Diode Forward Current	IS	-	-	-	4	A
Maximum Pulsed Drain-Source Diode Forward Current	ISM	-	-	-	16	A
Drain-Source Diode Forward Voltage	VSD	VGS=0V, IS=4.0A	-	-	1.4	V
Reverse recovery time	trr	VGS=0V, IS=4.0A dIF/dt=100A/s	-	380.7	900	ns
Reverse recovery charge	Qrr	VGS=0V, IS=4.0A dIF/dt=100A/s	-	1.555	4.0	C

2409280102_Jilin-Sino-Microelectronics-JCS4N60VC-IPAK_C272521.pdf

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