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N Channel Power MOSFET Jingdao Microelectronics F5N50L Suitable for High Speed Switching and Adaptors

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N Channel Power MOSFET Jingdao Microelectronics F5N50L Suitable for High Speed Switching and Adaptors

Drain to Source Voltage : 500V

Current - Continuous Drain(Id) : 5A

RDS(on) : 1.6Ω@10V,2.5A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 4V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 12pF

Output Capacitance(Coss) : 66pF

Pd - Power Dissipation : 45W

Input Capacitance(Ciss) : 564pF@25V

Gate Charge(Qg) : 17nC@400V

Description : N-Channel 500V 5A 45W Through Hole TO-220F-3L

Mfr. Part # : F5N50L

Model Number : F5N50L

Package : TO-220F-3L

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Product Overview

The F5N50L is a high voltage N-Channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics, making it suitable for use in switching power supplies and adaptors.

Product Attributes

Brand: Jingdao Microelectronics
Origin: Shandong, China
Case Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
Certifications: RoHS compliant

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	V_DSS	500	V
Gate-Source Voltage	V_GSS	±30	V
Continuous Drain Current	I_D	5	A	T_C=25°C
Continuous Drain Current	I_D	3.2	A	T_C=100°C
Pulsed Drain Current (Note 2)	I_DM	20	A
Power Dissipation (Note 1)	P_D	45	W	T_C=25°C
Avalanche Energy Single Pulsed (Note 3)	E_AS	112	mJ
Peak Diode Recovery dv/dt (Note 4)	dv/dt	2.1	V/ns
Operating junction and storage temperature	T_j,T_stg	-55 ~ +150	°C
THERMAL CHARACTERISTICS
Thermal resistance, junction – case	R_thJC	4	°C/W
Thermal resistance, junction – ambient(min. footprint)	R_thJA	63	°C/W
ELECTRICAL CHARACTERISTICS
Drain-Source Breakdown Voltage	BVDSS	500	V	V_GS=0V, I_D=250µA
Gate-Source Leakage Current	I_GSS	±1.0	µA	V_GS=±30V, V_DS=0V
Drain-Source Leakage Current	I_DSS	500	µA	V_DS=500V, V_GS=0V
Gate Threshold Voltage	V_GS(TH)	2.0	V	V_DS=V_GS, I_D=250µA
Static Drain-Source On-State Resistance	R_DS(ON)	1.6	Ω	V_GS=10V, I_D=2.5A
Forward Transconductance	g_FS	3.3	S	V_DS=15V, I_D=2.5A
SWITCHING CHARACTERISTICS
Total Gate Charge	Q_G	17	nC	V_DS=400V, V_GS=10V, I_D=5A
Gate-Drain Charge	Q_GD	4.0	nC
Gate-Source Charge	Q_GS	8	nC
Turn-On Delay Time	t_D(ON)	11	ns
Turn-On Rise Time	t_R	28	ns
Turn-Off Delay Time	t_D(OFF)	36	ns
Turn-Off Fall Time	t_F	26	ns
DYNAMIC CHARACTERISTICS
Input Capacitance	C_ISS	564	pF	V_DS=25V, V_GS=0V, f=1.0MHz
Output Capacitance	C_OSS	66	pF
Reverse Transfer Capacitance	C_RSS	12	pF
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage	V_SD	1.4	V	I_SD=5A, V_GS=0V
Maximum Body-Diode Continuous Current	I_S	5	A
Maximum Body-Diode Pulsed Current	I_SM	20	A
Reverse Recovery Time	t_rr	319	ns	I_F=5A, di/dt=100A/μs, V_GS=0V
Reverse Recovery Charge	Q_rr	3.9	µC

2305040947_Jingdao-Microelectronics-F5N50L_C5632446.pdf

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