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High voltage Power MOSFET Jingdao Microelectronics F10N70L with excellent avalanche energy handling

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High voltage Power MOSFET Jingdao Microelectronics F10N70L with excellent avalanche energy handling

Drain to Source Voltage : 700V

Current - Continuous Drain(Id) : 10A

RDS(on) : 1.2Ω@10V,5A

Operating Temperature - : -55℃~+150℃

Gate Threshold Voltage (Vgs(th)) : 4V

Type : N-Channel

Reverse Transfer Capacitance (Crss@Vds) : 9.5pF

Output Capacitance(Coss) : 131pF

Pd - Power Dissipation : 50W

Input Capacitance(Ciss) : 1.653nF@25V

Gate Charge(Qg) : 29nC@10V

Description : N-Channel 700V 10A 50W Through Hole TO-220F-3L

Mfr. Part # : F10N70L

Model Number : F10N70L

Package : TO-220F-3L

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Product Overview

The F10N70L is a high voltage N-channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is commonly used in switching power supplies and adaptors.

Product Attributes

Brand: Jingdao Microelectronics co.LTD
Origin: Shandong, China
Material: "Green" molding compound, UL flammability classification 94V-0, "Halogen-free"
Certifications: RoHS compliant

Technical Specifications

Parameter	Symbol	Rating	Unit	Conditions
ABSOLUTE MAXIMUM RATINGS
Drain-Source Voltage	VDSS	700	V
Gate-Source Voltage	VGSS	±30	V
Continuous Drain Current	ID	10	A	Tc=25°C
Continuous Drain Current	ID	6.3	A	Tc=100°C
Pulsed Drain Current (Note 2)	IDM	40	A
Avalanche Energy Single Pulsed (Note 3)	EAS	50	mJ
Peak Diode Recovery dv/dt (Note 4)	dv/dt	2.1	V/ns
Power Dissipation	PD	1653	W	Tc=25°C
Operation Junction Temperature and Storage Temperature	Tj, stg	-55 ~ +150	°C
THERMAL DATA
Junction to Ambient	RthJA	62.5	°C/W	Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
Junction to Case	RthJC	2.5	°C/W
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage	BVDSS	700	V	VGS=0V, ID=0.25mA
Gate-Source Leakage Current	IGSS	±100	nA	VGS=±30V, VDS=0V
Drain-Source Leakage Current	IDSS	1	µA	VDS=700V, VGS=0V
ON CHARACTERISTICS
Gate Threshold Voltage	VGS(TH)	2.0	V	VDS=VGS, ID=0.25mA
Static Drain-Source On-State Resistance	RDS(ON)	1.2	Ω	VGS=10V, ID=5.0A
DYNAMIC CHARACTERISTICS
Input Capacitance	CISS	131	pF	VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance	COSS	29	pF	VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance	CRSS	13	pF	VDS=25V, VGS=0V, f=1.0MHz
SWITCHING CHARACTERISTICS
Total Gate Charge	QG	43	nC	VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2)
Gate-Drain Charge	QGD	10	nC	VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2)
Gate-Source Charge	QGS	41	nC	VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2)
Turn-On Delay Time	tD(ON)	82	ns	VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2)
Turn-On Rise Time	tR	41	ns	VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2)
Turn-Off Delay Time	tD(OFF)	100	ns	VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2)
Turn-Off Fall Time	tF	561	ns	VDS=350V, VGS=10V, ID=10A, RG=25Ω (Note 1,2)
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Body-Diode Continuous Current	IS	10	A
Maximum Body-Diode Pulsed Current	ISM	40	A
Drain-Source Diode Forward Voltage	VSD	1.4	V	IS=10A, VGS=0V (Note 1)
Reverse Recovery Time	trr	4.3	µs	IS=10A, VGS=0V, di/dt=100A/µs (Note 1)
Reverse Recovery Charge	Qrr	561	µC	IS=10A, VGS=0V, di/dt=100A/µs (Note 1)

2209091800_Jingdao-Microelectronics-F10N70L_C5157068.pdf

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